MMBTA42 datasheet(1/3 Pages) DAYA

Part #	MMBTA42

Description	SOT-23 Plastic-Encapsulate Transistors

PDF	3 Pages

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Manufacturer	DAYA [Daya Electric Group Co., Ltd.]

Direct Link	http://www.cndaya.com

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SOT-23 Plastic-Encapsulate Transistors

MMBTA42

TRANSISTOR (NPN)

FEATURES

High breakdown voltage

Low collector-emitter saturation voltage

Complementary to MMBTA92(PNP)

MARKING:1D

MAXIMUM RATINGS (TA=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

300

V

VCEO

Collector-Emitter Voltage

300

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current -Continuous

0.

3

A

PC

Collector Power Dissipation

0.35

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC=100μA,IE=0

300

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=1mA,IB=0

300

V

Emitter-base breakdown voltage

V(BR)EBO

IE=100μA,IC=0

5

V

Collector cut-off current

ICBO

VCB=200V,IE=0

0.25

μA

Emitter cut-off current

IEBO

VEB=5V,IC=0

0.1

μA

hFE(1)

VCE=10V,IC=1mA

60

hFE(2)

VCE=10V,IC=10mA

100

200

DC current gain

hFE(3)

VCE=10V,IC=30mA

60

Collector-emitter saturation voltage

VCE(sat)

IC=20mA,IB=2mA

0.2

V

Base-emitter saturation voltage

VBE(sat)

IC=20mA,IB=2mA

0.9

V

Transition frequency

fT

VCE=20V,IC=10mA,f=30MHz

50

MHz

SOT-23

1. BASE

2. EMITTER

3. COLLECTOR

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MMBTA42 Datasheet(PDF) 1 Page - Daya Electric Group Co., Ltd.

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