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M8050 Datasheet(PDF) 1 Page - Daya Electric Group Co., Ltd.

Part # M8050
Description  SOT-23 Plastic-Encapsulate Transistors
PDF  2 Pages
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Manufacturer  DAYA [Daya Electric Group Co., Ltd.]
Direct Link  http://www.cndaya.com
Logo DAYA - Daya Electric Group Co., Ltd.

M8050 Datasheet(HTML) 1 Page - Daya Electric Group Co., Ltd.

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SOT-23
Plastic-Encapsulate Transistors
M8050
TRANSISTOR (NPN)
FEATURES
Power dissipation
MARKING: Y11
MAXIMUM RATINGS (TA=25
℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
25
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current -Continuous
0.8
A
PC
Collector Power Dissipation
0.2
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25
℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC= 100μA, IE=0
40
V
Collector-emitter breakdown voltage
V(BR)CEO*IC=1mA , IB=0
25
V
Emitter-base breakdown voltage
V(BR)EBO
IE= 100μA, IC=0
6
V
Collector cut-off current
ICBO
VCB= 35V, IE=0
0.1
μA
Collector cut-off
current
ICEO
VCE= 20V, IB=0
0.1
μA
hFE(1)
VCE=1V, IC=5mA
45
hFE(2)
VCE=1V, IC=100mA
80
300
DC current gain
hFE
(
3)
VCE=1V, IC=800mA
40
Collector-emitter saturation voltage
VCE(sat)
IC= 800mA, IB=80mA
0.5
V
Base-emitter saturation voltage
VBE(sat)
IC=800mA, IB= 80mA
1.2
V
Transition frequency
f T
VCE=6V, IC= 20mA , f=30MHz
150
MHz
* Pulse Test : pulse width ≤ 300µs , duty cycle ≤2%.
CLASSIFICATION OF
hFE(2)
Rank
L
H
Range
80-200
200-300
SOT-23
1. BASE
2.
EMITTER
3.
COLLECTOR


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