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C9WT821 Datasheet(PDF) 4 Page - Seoul Semiconductor |
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C9WT821 Datasheet(HTML) 4 Page - Seoul Semiconductor |
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4 / 16 page ![]() SSC-QP-7-07-24 (Rev.00) Rev. 01 Rev. 01 October 2009 October 2009 www. www.acriche acriche.com .com 2. Absolute maximum ratings ºC -40 ~ +100 Tstg Storage Temperature ºC -40 ~ +85 Topr Operating Temperature V 5 VR Reverse Voltage (per die) mA 100 IFM *2 Peak Forward Current (Per die) mA 90 IF Forward Current mW 324 Pd Power Dissipation Unit Value Symbol Parameter *1 Care is to be taken that power dissipation does not exceed the absolute maximum rating of the product. *2 IFM was measured at T W ≤ 0.1msec of pulse width and D ≤ 1/10 of duty ratio. 3. Electric & Optical characteristics 92 I F =60mA Ra Color Rendering Index lm/W - 71 - I F =60mA Ŋ elc Optical Efficiency cd - 4.5 4.0 I F =60mA IV Luminance Intensity *1 [2,600 ~ 4,700 K ] deg - 120 - I F =60mA 2 θ ½ Viewing Angle *2 K 7,000 2,600 CCT Color Temperature lm - 14 - I F =60mA ΦV Luminance Flux [CIE X = 0.31, Y = 0.31] µA 10 - - V R=5V IR Reverse Current (per die) V 3.6 3.3 3.0 I F =20mA VF Forward Voltage (per die) Unit Max Typ Min Condition Symbol Parameter *1. The luminous intensity IV was measured at the peak of the spatial pattern which may not be aligned with the mechanical axis of the LED package. Luminous Intensity Measurement allowance is ±10% *2. 2 θ½ is the off-axis where the luminous intensity is 1/2 of the peak intensity. [Note] All measurements were made under the standardized environment of SSC. |
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