HAT1038R datasheet(2/8 Pages) RENESAS

2 / 8 page

HAT1038R, HAT1038RJ

Preliminary

REJ03G1150-0600 Rev.6.00 Aug 25, 2009

Page 2 of 7

Electrical Characteristics

(Ta = 25

°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown voltage

V (BR) DSS

–60

—

ID = –10 mA, VGS = 0

Gate to source leak voltage

V (BR) GSS

±20

—

IG = ±100 μA, VDS = 0

Gate to source leak current

IGSS

—

±10

μA

VGS = ±16 V, VDS = 0

HAT1038R

IDSS

—

–1

μA

Zero gate voltage drain

current

HAT1038RJ

IDSS

—

–0.1

μA

VDS = –60 V, VGS = 0

HAT1038R

IDSS

—

μA

Zero gate voltage drain

current

HAT1038RJ

IDSS

—

–10

μA

VDS = –48 V, VGS = 0

Ta = 125

°C

Gate to source cutoff voltage

VGS (off)

–1.2

—

–2.2

VDS = –10 V, ID = –1 mA

RDS (on)

—

0.12

0.15

ID = –2 A, VGS = –10 V

Note 5

Static drain to source on state resistance

RDS (on)

—

0.16

0.23

ID = –2 A, VGS = –4 V

Note 5

Forward transfer admittance

|yfs|

4.5

—

ID = –2 A, VDS = –10 V

Note 5

Input capacitance

Ciss

—

600

—

Output capacitance

Coss

—

290

—

Reverse transfer capacitance

Crss

—

VDS = –10 V

VGS = 0

f = 1 MHz

Turn-on delay time

td (on)

—

Rise time

—

Turn-off delay time

td (off)

—

100

—

Fall time

—

VGS = –10 V, ID = –2 A,

VDD ≅ –30 V

Body-drain diode forward voltage

VDF

—

–0.98

–1.28

IF = –3.5 A, VGS = 0

Note 5

Body-drain diode reverse recovery time

trr

—

IF = –3.5 A, VGS = 0

diF/dt = 50 A/μs

Note: 5. Pulse test

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