ATtiny13A datasheet(115/174 Pages) ATMEL

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115

8126D–AVR–11/09

ATtiny13A

Figure 17-4. High-voltage Serial Programming Waveforms

17.8.3

Programming the EEPROM

The EEPROM is organized in pages, see Table 18-9 on page 122. When programming the

EEPROM, the data is latched into a page buffer. This allows one page of data to be pro-

grammed simultaneously. The programming algorithm for the EEPROM Data memory is as

follows (refer to Table 17-13 on page 111):

1. Load Command “Write EEPROM”.

2. Load EEPROM Page Buffer.

3. Program EEPROM Page. Wait after Instr. 2 until SDO goes high for the “Page Pro-

gramming” cycle to finish.

4. Repeat 2 through 3 until the entire EEPROM is programmed or until all data has been

programmed.

5. End Page Programming by Loading Command “No Operation”.

17.8.4

Reading the Flash

The algorithm for reading the Flash memory is as follows (refer to Table 17-13 on page 111):

1. Load Command "Read Flash".

2. Read Flash Low and High Bytes. The contents at the selected address are available at

serial output SDO.

17.8.5

Reading the EEPROM

The algorithm for reading the EEPROM memory is as follows (refer to Table 17-13 on page

111):

1. Load Command “Read EEPROM”.

2. Read EEPROM Byte. The contents at the selected address are available at serial out-

put SDO.

17.8.6

Programming and Reading the Fuse and Lock Bits

The algorithms for programming and reading the fuse low/high bits and lock bits are shown in

Table 17-13 on page 111.

MSB

LSB

0123456789

SDI

PB0

SII

PB1

SDO

PB2

SCI

PB3

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