HAT3008R datasheet(2/12 Pages) RENESAS

2 / 12 page

HAT3008R, HAT3008RJ

Preliminary

REJ03G1198-0500 Rev.5.00 Aug 25, 2009

Page 2 of 11

Electrical Characteristics

N Channel

(Ta = 25

°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown voltage

V (BR) DSS

—

ID = 10 mA, VGS = 0

Gate to source breakdown voltage

V (BR) GSS

±20

—

IG = ±100 μA, VDS = 0

Gate to source leak current

IGSS

—

±10

μA

VGS = ±16 V, VDS = 0

HAT3008R

IDSS

—

μA

Zero gate voltage drain

current

HAT3008RJ

IDSS

—

0.1

μA

VDS = 60 V, VGS = 0

HAT3008R

IDSS

—

μA

Zero gate voltage drain

current

HAT3008RJ

IDSS

—

μA

VDS = 48 V, VGS = 0

Ta = 125

°C

Gate to source cutoff voltage

VGS (off)

1.2

—

2.2

VDS = 10 V, ID = 1 mA

RDS (on)

—

0.043

0.058

ID = 3 A, VGS = 10 V

Note 5

Static drain to source on state resistance

RDS (on)

—

0.056

0.084

ID = 3 A, VGS = 4 V

Note 5

Forward transfer admittance

|yfs|

—

ID = 3 A, VDS = 10 V

Note 5

Input capacitance

Ciss

—

520

—

Output capacitance

Coss

—

270

—

Reverse transfer capacitance

Crss

—

100

—

VDS = 10 V

VGS = 0

f = 1 MHz

Turn-on delay time

td (on)

—

Rise time

—

Turn-off delay time

td (off)

—

110

—

Fall time

—

VGS = 10 V, ID = 3 A

VDD ≅ 30 V

Body-drain diode forward voltage

VDF

—

0.84

1.1

IF = 5 A, VGS = 0

Note 5

Body-drain diode reverse recovery time

trr

—

IF = 5 A, VGS = 0

diF/dt = 50 A/μs

Note: 5. Pulse test

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