NTGS3136P datasheet(2/5 Pages) ONSEMI

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NTGS3136P

http://onsemi.com

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Junction-to-Ambient – Steady State (Note 3)

RqJA

100

°C/W

Junction-to-Ambient – t = 5 s (Note 3)

RqJA

Junction-to-Ambient – Steady State (Note 4)

RqJA

185

3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces)

4. Surface-mounted on FR4 board using the minimum recommended pad size (Cu area = 0.0775 in sq).

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain-to-Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = -250 mA

-20

Drain-to-Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/TJ

ID = -250

mA, Reference 25°C

-13

mV/

°C

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V,

VDS = -20 V

TJ = 25°C

-1.0

TJ = 85°C

-5.0

Gate-to-Source Leakage Current

IGSS

VDS = 0 V, VGS = ±8.0 V

$0.1

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = -250 mA

-0.4

-1.0

Negative Threshold Temperature Coefficient

VGS(TH)/TJ

mV/

°C

Drain-to-Source On Resistance

RDS(on)

VGS = -4.5 V, ID = -5.1 A

VGS = -2.5 V, ID = -4.5 A

VGS = -1.8 V, ID = -2.5 A

Forward Transconductance

gFS

VDS = -5.0 V, ID = -5.1 A

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance

CISS

VGS = 0 V, f = 1 MHz, VDS = -10 V

1901

Output Capacitance

COSS

274

Reverse Transfer Capacitance

CRSS

175

Total Gate Charge

QG(TOT)

VGS = -4.5 V, VDS = -10 V;

ID = -5.1 A

Threshold Gate Charge

QG(TH)

0.7

Gate-to-Source Charge

QGS

2.4

Gate-to-Drain Charge

QGD

4.3

Gate Resistance

7.6

SWITCHING CHARACTERISTICS (Note 6)

Turn-On Delay Time

td(ON)

VGS = *4.5 V, VDD = -10 V,

ID = -1.0 A, RG = 6.0 W

Rise Time

Turn-Of f Delay Time

td(OFF)

160

Fall Time

DRAIN-SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V,

IS = -1.7 A

TJ = 25°C

-0.7

-1.2

TJ = 125°C

-0.6

Reverse Recovery Time

tRR

VGS = 0 V, dIS/dt = 100 A/ms,

IS = -1.7 A

5. Pulse Test: pulse width

v 300 ms, duty cycle v 2%

6. Switching characteristics are independent of operating junction temperatures

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