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R
RT
T5
55
50
0P
PD
D
P
Po
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er
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Tr
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▪ All specifications may change without notice.
▪ Version 5.2
Description
The RT550PD is designed for base stations and cell extenders as 300MHz ~ 3GHz.
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Drain - Source Voltage
Vds
+12
V
Gate - Source Voltage
Vgs
-5V~0V
V
Total Power Dissipation
Pt
37
W
Storage Temperature
Tstg
-65 ~ +200
℃
Channel Temperature
Tch
175
℃
Electrical Characteristics (Ta=+25℃)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Saturated Drain Current
Idss
5000
6700
mA
Transconductance
gm
3300
mS
Pinch-off Voltage
Vp
Vds=3V, Vgs=0V
Vds=3V, Ids=3600mA
Vds=3v, Ids=360mA
-1.6
-1.9
-3.5
V
Breakdown Voltage Gate-Source
Bvgs
-20
-25
V
Breakdown Voltage Gate-Drain
Bvgd
-20
-25
V
Output Power @ 1dB G.C.P
P1dB
39
40
dBm
Linear Power Gain
GLP
10
dB
Power added efficiency @ 1dB
ηadd
Vds=9V, Id=2.4A
F=2.3GHz
40
%
Thermal Resistance (Channel to Case)
Rth
4.0
4.5
℃
/W
Product Features
• High Output Power
P1dB = 40dBm(typ)@2.3GHz
• High Efficiency
• High Power Gain
G1dB = 10dB(typ) @2.3GHz
• High Linearity
• Hermetically sealed package
• Competitive Price
Application
• Repeater
• RF Sub-Systems
• Base Station
• Converter
• MMDS
Package Type : WP-22
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