L
Lo
ow
w N
No
oiisse
e A
Am
mp
plliiffiie
er
r
C
CL
L0
09
90
02
2--L
L // C
CL
L1
15
50
02
2--L
L
C
CL
L1
18
80
02
2--L
L // C
CL
L2
21
10
02
2--L
L
▪ Tel : 82-31-250-5011
page 1/5
▪ All specifications may change without notice.
▪ rfsales@rfhic.com
▪ Version 6.2
Product Features
Applications
• GaAs p-HEMT chip on board
• No matching circuit needed
• High Maximum input power(+25dBm)
• High IP3 & Low Noise
• Single Supply Voltage (+5V)
• Surface Mount Hybrid Type
• Tape & Reel Packaging
• Small Size, High Heatsink
• Alumina Substrate
• Pb Free / RoHS Standard
• 2G & 3G Repeater
• Base Station
• PCS, CDMA, W-CDMA
• GSM, DCS, UMTS
• WiMAX, Wibro, WLAN
• RF Sub-Systems
Descriptions
RFHIC’s LOW Noise Amplifier series are all hybrid LNA type products which includes all matching for the convenience of
customers. CL series are focused on giving lowest noise possible. The structure of the device is built with GaAs p-HEMT die
attached on a ceramic thick film substrate. The device is still smaller than the area one would use for the application notes all
together. Depending on the part number, one can use this in different frequency applications. All LNA hybrids are possible to have
custom frequency & spec without any additional NRE cost involved.
All RFHIC products are RoHS compliant.
Electrical Specifications
Parameter
Units
CL0902-L
CL1502-L
CL1802-L
CL2102-L
Frequency Range
MHz
824~894
(Cellular)
890~960
(GSM)
1400~1600
1700~2000
1850~2200
Small Signal Gain (S21)
dB
21
20
17
16
15
Gain Flatness
dB
±0.5
±0.5
±0.5
±0.5
±1.0
Input Return Loss (S11)
dB
-17
-17
-17
-18
-18
Output Return Loss (S22)
dB
-8.5
-8.5
-10
-10
-10
1dB Compression Point (P1dB)
dBm
20
20
21
21
20
Output 3rd Order Intercept Point
(OIP3) (TYP.)
dBm
31
31
33
33
33
Noise Figure (TYP.)
dB
0.7
0.7
0.6
0.6
0.6
DC Supply Current (Vdc=+5V)
mA
100
100
90
100
100
Test Condition
①
Supply voltage = +5V, 50ohm System, Ta = 25℃
OIP3 is measured with two tones, at an output power of +0dBm/tone separated by 1MHz.
②
Package : CP-16A
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