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M
MM
MIIC
C
A
AP
P2
21
11
1
Product Features
Application
• 50 ~ 3000 MHz
• GaAs MMIC
• 42dBm Output IP3
• 13dB Gain
• 24dBm P1dB
• Single +5V Supply
• CDMA,W-CDMA Medium Power Amplifier
• High Linearity Drive Amplifier
Description
AP211 is a high linearity amplifier designed with GaAs MMIC in a low cost.
AP211 is designed for applications such as GSM, CDMA, W-CDMA drive devices which require high IP3
ELECTRICAL CHARACTERISTICS
Absolute Minimum and Maximum Ratings
PARAMETER
UINT
MIN
MAX
Device Voltage
VDC
+8
RF Input Power
dBm
+10
Storage Temperature
℃
-40
+150
Package : SOIC-8
Operating Ranges
PARAMETER
UNIT
MIN
TYP
MAX
Operating Frequency
MHz
50
3000
Device Voltage
VDC
+5
+6
Case Temperature
℃
-40
+85
Electrical Specifications
(Ta=+25℃, VDD=+5V, Fc=900MHz )
PARAMETER
UNIT
MIN
TYP
MAX
Gain
dB
12
13
Input Return Loss
dB
-20
Output Return Loss
dB
-22
Output IP3
dBm
+38
+42
1dB Compression Point
dBm
+24
Noise Figure
dB
2.5
DC Current
mA
230
Supply Voltage
VDC
+5
Thermal Resistance(Rth)
℃
/W
33
OIP3 is measured with two tones, at an output power of 10dBm/tone separated by 1MHz
▪ Tel : 82-31-250-5011
▪ All specifications may change without notice.
▪ rfsales@rfhic.com
▪ Version 5.3
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