2N1613 datasheet(2/3 Pages) COMSET

2 / 3 page

NPN 2N1613 – 2N1711

COMSET SEMICONDUCTORS

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Unit

VCE=60 V, IE=0

ICBO

Collector Cutoff Current

VCE=60 V, IE=0, Tamb =

150°C

µA

2N1613 VEB=5 V

IEB0

Emitter Cutoff Current

2N1711 VEB=5 V

VCBO

Collector Base Breakdown Voltage

IC=0.1 mA

VCER(*)

Collector Emitter Breakdown

Voltage

IC=10 mA , RBE=10 Ω

VEBO

Emitter Base Breakdown Voltage

IE=100 µA , IC=0

VCE(SAT)(*) Collector-Emitter saturation Voltage

IC=150 mA , IB=15 mA

1.5

VBE(SAT)(*) Base-Emitter saturation Voltage

IC=150 mA , IB=15 mA

1.3

IC=0.01 mA , VCE=10 V

IC=0.1 mA , VCE=10 V

IC=10 mA , VCE=10 V

IC=150 mA , VCE=10 V

120

IC=500 mA , VCE=10 V

2N1613

IC=10 mA , VCE=10 V,

Tamb=55°C

IC=0.01 mA , VCE=10 V

IC=0.1 mA , VCE=10 V

IC=10 mA , VCE=10 V

130

IC=150 mA , VCE=10 V

100

300

IC=500 mA , VCE=10 V

hFE(*)

DC Current Gain

2N1711

IC=10 mA , VCE=10 V,

Tamb=55°C

2N1613

IC=1 mA , VCE=10 V,

f = 1 kHz

150

hfe

Small Signal Current Gain

2N1711

IC=1 mA , VCE=10 V,

f = 1 kHz

300

2N1613

IC=1 mA , VCE=5 V,

f = 1 kHz

2.2

hje

Input Impedance

2N1711

IC=1 mA , VCE =5 V,

f = 1 kHz

4.4

Ω

2N1613

IC=1 mA , VCE =5 V,

f = 1 kHz

3.6x10

-4

hre

Reverse VoltageRatio

2N1711

IC=1 mA , VCE =5 V,

f = 1 kHz

7.3x10

-4

2N1613

IC=1 mA , VCE =5 V,

f = 1 kHz

12.5

hoe

Output Admitance

2N1711

IC=1 mA , VCE =5 V,

f = 1 kHz

23.8

µS

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