2N3055 datasheet(2/2 Pages) COMSET

2 / 2 page

COMSET SEMICONDUCTORS

2/2

2N3055

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min Typ Mx Unit

VCEO(SUS)

Collector-Emitter Sustaining

Voltage (1)

IC=200 mAdc, IB=0

Vdc

BVCER

Collector-Emitter

Breakdown Voltage (1)

IC=200 mAdc, RBE=100Ω

Vdc

ICEO

Collector-Emitter Current

CVE=30 Vdc, IB=0

0.7

mAdc

VCE=100 Vdc, VEB(off)=1.5 Vdc

5.0

ICEX

Collector Cutoff Current

VCE=100 Vdc, VEB(off)=1.5 Vdc,

TC=150°C

mAdc

IEBO

Emitter Cutoff Current

VBE=7.0 Vdc, IC=0

5.0

mAdc

IC=4.0 Adc, VCE=4.0 Vdc

hFE

DC Current Gain

IC=10 Adc, VCE=4.0 Vdc

5.0

IC=4.0 Adc, IB=0.4Adc

1.1

VCE(SAT)

Collector-Emitter saturation

Voltage

IC=10 Adc, IB=3.3Adc

8.0

Vdc

VBE

Base-Emitter Voltage

IC=4.0 Adc, VCE=4.0 Vdc

1.8

Vdc

hfe

Small Signal Current Gain

VCE=4.0 Vdc, IC=1.0 Adc, f=1.0 kHz

120

fαe

Small Signal Current Gain

Cutoff Frequency

VCE=4.0 Vdc, IC+=1.0 Adc, f=1.0 kHz

kHz

Is/b

Second Breakdown

Collector Current

t=1 S (non repetitive), VCE=60 Vdc

1.95

In accordance with JEDEC Registration Data

(1) Pulse Width

≈ 300 µs, Duty Cycle ∠ 2.0%

MECHANICAL CHARACTERISTICS CASE-TO-3

DIMENSIONS

inches

25,51

1,004

38,93

1,53

30,12

1,18

17,25

0,68

10,89

0,43

11,62

0,46

8,54

0,34

1,55

0,6

19,47

0,77

0,04

4,06

0,16

Pin 1 :

Base

Pin 2 :

Emitter

Case :

Collector

Information furnished is believed to be accurate and reliable. However, CS assumes no responsability

for the consequences of use of such information nor for errors that could appear.

Data are subject to change without notice.

2N3055 Datasheet(PDF) 2 Page - Comset Semiconductor

2N3055 Datasheet(HTML) 2 Page - Comset Semiconductor

Html Pages

1 2

Datasheet Download

Link URL