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2N3583 Datasheet(PDF) 1 Page - Comset Semiconductor |
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2N3583 Datasheet(HTML) 1 Page - Comset Semiconductor |
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1 / 3 page ![]() NPN 2N3583 – 2N3584 – 2N3585 COMSET SEMICONDUCTORS 1 High voltage power transistors designed for industrial and military applications. TO-66 metal case. Compliance to RoHS. NPN SILICON POWER TRANSISTORS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit 2N3583 250 2N3584 330 VCBO Collector-Base Voltage (IE= 0) 2N3585 440 V 2N3583 175 2N3584 250 VCEO Collector-Emitter Voltage (IB= 0) 2N3585 300 V VEBO Emitter-Base Voltage (IC= 0) 6 V 2N3583 1 2N3584 2 IC Collector Current 2N3585 2 A ICM Peak Collector Current tp = 10ms 5 A IB Base current 1 A PT Total power Dissipation @ Tmb = 70°C 35 Watts TJ Junction Temperature 200 °C TStg Storage Temperature -65 to +200 °C THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJC Thermal Resistance, Junction to Case 5 RthJA Thermal Resistance, Junction to ambient in free air 87.5 °C/W |
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