2N3584 datasheet(2/3 Pages) COMSET

2 / 3 page

NPN 2N3583 – 2N3584 – 2N3585

COMSET SEMICONDUCTORS

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min Typ Mx

Unit

2N3583

2N3584

ICEO

Collector-Emitter cut-off

current

IB = 0 ; VCE = 150 V

2N3585

VBE = -1.5V ;

VCE = 225 V

2N3583

VBE = -1.5V ;

VCE = 340 V

2N3584

VBE = -1.5V ;

VCE = 450 V

2N3585

VBE = -1.5V ;

VCE = 225 V

Tj= 150°C

2N3583

2N3584

ICEX

Collector-Emitter cut-off

current

VBE = -1.5V ;

VCE = 300 V

Tj= 150°C

2N3585

2N3583

2N3584

0.5

IEBO

Emitter cut-offcurrent

IC = 0 ; VEB = 6 V

2N3585

0.5

2N3583

175

2N3584

250

VCEO(SUS)

Collector-Emitter

sustaning Voltage (1)

IB = 0 ; IC = 200 mA

2N3585

300

2N3583

2N3584

0.75

VCE(SAT)

Collector-Emitter

saturation Voltage (1)

IC = 1 A ; IB = 125 mA

2N3585

0.75

2N3583

2N3584

VBE(SAT)

Base-Emitter saturation

Voltage (1)

IC = 1 A ; IB = 100 mA

2N3585

1.4

VCE = 10 V ; IC = 500 mA

2N3583

200

2N3583

2N3584

100

VCE = 10 V ; IC = 1 A

2N3585

100

2N3584

hFE

DC Current Gain (1)

VCE = 2 V ; IC = 1 A

2N3585

2N3583

2N3584

IS/B

Second Breakdown

Collector current

VCE = 100 V ; t = 1 s

2N3585

350

2N3583

2N3584

Transition frequency

VCE = 10 V ; IC = 200 mA

f = 5 MHz

2N3585

MHz

2N3584

td+tr

Turn-on-time

IC = 1 A ; IB = 100 mA

2N3585

2N3584

Fall time

IC = 1 A ; IB = 100 mA

2N3585

2N3584

Carrier storage time

IC = 1 A ; IB = 100 mA

2N3585

µs

Measured under pulse conditions :tP <300µs, δ <2%.

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