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2N6053 Datasheet(PDF) 2 Page - Comset Semiconductor |
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2N6053 Datasheet(HTML) 2 Page - Comset Semiconductor |
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2 / 3 page ![]() 2 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Mx Unit 2N6053 VCEO(SUS) Collector-Emitter Sustaining Voltage (1) IC=100 mA 2N6055 60 - - V 2N6053 ICEO Collector-Emitter Current VCE=30 V 2N6055 - - 0.5 mA 2N6053 VCE=60 V, VBE=-1.5 V 2N6055 - - 500 µA 2N6053 ICEX Collector-Cutoff Current VCE=60 V, VBE=-1.5 V TC=150°C 2N6055 - - 5 mA 2N6053 IEBO Emitter Cutoff Current VEB=5.0 V 2N6055 - - 2.0 mA 2N6053 IC=4.0 A, VCE=3.0 V IC=8.0 A, VCE=3.0 V 2N6055 750 - 18K 2N6053 hFE DC Current Gain (*) 2N6055 100 - - - IC=4.0 A, IB=16 mA 2N6053 - - 2.0 VCE(SAT) Collector-Emitter saturation Voltage (*) IC=8.0 A, IB=80 mA 2N6055 - - 3.0 V 2N6053 - - VBE(SAT) Base-Emitter Voltage (*) IC=8.0 A, IB=80 mA 2N6055 - - 4.0 V 2N6053 VBE(on) Base-Emitter Voltage IC=4.0 A, VCE=3.0 V 2N6055 - - 2.8 V 2N6053 - - fT Transition Frequency VCE=3.0 Vdc, IC=3.0 Adc, f=1 MHz 2N6055 4 - - MHz 2N6053 - - 200 Ccbo Collector-base Capacitance VCB=10 V, IE=0, f=1 MHz 2N6055 - - 300 pF (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% ! ! ! For PNP types current and voltage values are negative ! ! ! |
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