2N6053 datasheet(2/3 Pages) COMSET

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COMSET SEMICONDUCTORS

2/3

2N6053 PNP

2N6055 NPN

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min Typ Mx Unit

VCEO(SUS)

Collector-Emitter Sustaining

Voltage (1)

IC=100 mA

2N6053

2N6055

ICEO

Collector-Emitter Current

VCE=30 V

2N6053

2N6055

0.5

VCE=60 V, VBE=-1.5 V

2N6053

2N6055

500

µA

ICEX

Collector-Cutoff Current

VCE=60 V, VBE=-1.5 V

TC=150°C

2N6053

2N6055

IEBO

Emitter Cutoff Current

VEB=5.0 V

2N6053

2N6055

2.0

IC=4.0 A, VCE=3.0 V

750

18K

hFE

DC Current Gain (*)

IC=8.0 A, VCE=3.0 V

2N6053

2N6055

100

IC=4.0 A, IB=16 mA

2.0

VCE(SAT)

Collector-Emitter saturation

Voltage (*)

IC=8.0 A, IB=80 mA

2N6053

2N6055

3.0

VBE(SAT)

Base-Emitter Voltage (*)

IC=8.0 A, IB=80 mA

2N6053

2N6055

4.0

VBE(on)

Base-Emitter Voltage

IC=4.0 A, VCE=3.0 V

2N6053

2N6055

2.8

Transition Frequency

VCE=3.0 Vdc, IC=3.0 Adc, f=1 MHz

2N6053

2N6055

MHz

2N6053

300

Ccbo

Collector-base

Capacitance

VCB=10 V, IE=0, f=1 MHz

2N6055

200

(*) Pulse Width

≈ 300 µs, Duty Cycle ∠ 2.0%

For PNP types, values are negative

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