2N6251 datasheet(3/3 Pages) COMSET

3 / 3 page

COMSET SEMICONDUCTORS

2N6249 – 2N6250 – 2N6251

2N6249

2N6250

IEBO

Emitter Cutoff Current

VBE=6.0 Vdc, IC=0

2N6251

1.0

mAdc

2N6249 5.8

2N6250 5.8

Is/b

Ssecond Breakdown

Collector Current with

base forward biased

t=1.0S non-repetitive

VCE=30 Vdc

2N6251 5.8

Vdc

2N6249 2.5

2N6250 2.5

Es/b

Ssecond Breakdown

Energy with base reverse

biased t=1.0S non-

repetitive

IC= 10 A, VBE(off) = 4.0Vdc,

L = 50 µH

2N6251 2.5

2N6249

2N6250 8.0

hFE

DC Current Gain

IC=10 Adc, VCE=3.0 Vdc

2N6251 6.0

IC=10 Adc, IB=1 Adc

2N6249

1.5

IC=10 Adc, IB=1.25 Adc

2N6250

1.5

VCE(SAT)

Collector-Emitter

saturation Voltage (1)

IC=10 Adc, IB=1.67 Adc

2N6251

1.5

Vdc

IC=10 Adc, IB=1 Adc

2N6249

2.5

IC=10 Adc, IB=1.25 Adc

2N6250

2.5

VBE(SAT)

Base-Emitter saturation

Voltage (1)

IC=10 Adc, IB=1.67 Adc

2N6251

2.5

Vdc

(1) Mesured on a curve tracer (60 Hz full-wave rectified sine wave ).

Symbol

Ratings

Test Condition(s)

Min Typ Mx Unit

Current Gain – Bandwith

Product

VCE=10 Vdc, IC=1.0 Adc,

ftest = 1.0 Mhz

2.5

MHz

VCC= 200 Vdc, IC= 10 A, Duty Cycle <= 2.0% tp= 100 µs

Rise Time

IB1 = IB2=1.0 Adc

2N6259

2.0

Storage Time

IB1 = IB2=1.25 Adc

2N6250

3.5

Fall Time

IB1 = IB2=1.67 Adc

2N6251

1.0

µs

MECHANICAL DATA CASE TO-3

DIMENSIONS

inches

25,51

1,004

38,93

1,53

30,12

1,18

17,25

0,68

10,89

0,43

11,62

0,46

8,54

0,34

1,55

0,6

19,47

0,77

0,04

4,06

0,16

Pin 1 :

Base

Pin 2 :

Emitter

Case :

Collector

Information furnished is believed to be accurate and reliable. However, CS assumes no responsability

for the consequences of use of such information nor for errors that could appear.

Data are subject to change without notice.

2N6251 Datasheet(PDF) 3 Page - Comset Semiconductor

2N6251 Datasheet(HTML) 3 Page - Comset Semiconductor

Html Pages

1 2 3

Datasheet Download

Link URL