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BD142 Datasheet(PDF) 2 Page - Comset Semiconductor |
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BD142 Datasheet(HTML) 2 Page - Comset Semiconductor |
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2 / 3 page  COMSET SEMICONDUCTORS 2/3 BD142 THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-C Thermal Resistance, Junction to Case 1.5 °C/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Mx Unit VCEO(BR) Collector-Emitter Breakdown Voltage (*) IC=200 mA, IB=0 45 V VCEX(BR) Collector-Emitter Breakdown Voltage (*) IC=100 mA, VBE=-1.5 V 50 V VCE(SAT) Collector-Emitter Saturation Voltage (*) IC=4 A, IB=0.4 A - - 1.1 V ICEX Collector-Emitter Cutoff Current VCE= 40 V VBE=-1.5 V - - 2 mA IEBO Emitter-Base Cutoff Current VEB=7 V - - 1 mA VBE Base-Emitter Voltage (*) IC=4.0 A, VCE=4.0V - - 1.5 V |
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