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BD646 Datasheet(PDF) 4 Page - Comset Semiconductor |
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BD646 Datasheet(HTML) 4 Page - Comset Semiconductor |
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4 / 5 page ![]() BD644/646/648/650/652 Page 4 of 5 SEMICONDUCTORS Symbol Ratings Value Unit BD644 - - 2.5 BD646 - - - BD648 - - - BD650 - - - -IC=4 A, -VCE=3 V BD652 - - - BD644 - - - BD646 - - 2.5 BD648 - - 2.5 BD650 - - 2.5 -VBE Base-Emitter Voltage (*) -IC=3 A, -VCE=3 V BD652 - - 2.5 V BD644 - - BD646 - - BD648 - - BD650 - - -VCE=3.0 V, -IC=0.5 A BD652 - 2700 - BD644 750 - - BD646 - - - BD648 - - - BD650 - - - -VCE=3.0 V, -IC=4 A BD652 - - - BD644 - - - BD646 - - BD648 - - BD650 - - -VCE=3.0 V, -IC=3 A BD652 750 - - BD644 - - BD646 - - BD648 - - BD650 - - hFE DC Current Gain (*) -VCE=3.0 V, -IC=8 A BD652 - 200 - - BD644 10 - - BD646 - - - BD648 - - - BD650 - - - -VCE=3.0 V, -IC=4 A, f=1MHz BD652 - - - BD644 - - - BD646 10 - - BD648 10 - - BD650 10 - - hfe Small Signal Current Gain -VCE=3.0 V, -IC=3 A, f=1MHz BD652 10 - - ton turn-on time - 1 - µs toff turn-off time -IC=3 A, -IBon= IBoff=12 mA All types - 5 - µs (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% |
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