BD680 datasheet(2/3 Pages) COMSET

2 / 3 page

COMSET SEMICONDUCTORS

PNP BD676-BD678-BD680-BD682

NPN BD675-BD677-BD679-BD681

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Unit

IE=0 , -

VCB= -VCBOMAX=45 V

BD676

0,2

IE=0 , -

VCB= -VCBOMAX=60 V

BD678

0,2

IE=0 , -

VCB= -VCBOMAX=80 V

BD680

0,2

IE=0 , -

VCB= -VCBOMAX=100 V

BD682

0,2

IE=0 ,

VCB=

-½VCBOMAX=

45V,Tj= 150°C

BD676

IE=0 ,

VCB=

-½VCBOMAX=

60V,Tj= 150°C

BD678

IE=0 ,

VCB=

-½VCBOMAX=

80V,Tj= 150°C

BD680

-ICBO

Collector cut-off current

IE=0 ,

VCB=

-½VCBOMAX=

100V,Tj= 150°C

BD682

BD676

0,2

BD678

0,2

BD680

0,2

-ICEO

Collector cut-off current

IB=0 , -

VCE= -½VCEOMAX=60 V

BD682

0,2

-IEBO

Emitter cut-offcurrent

IC=0, -VEB=5 V

-VCE(SAT)

Collector-Emitter saturation

Voltage

-IC=1.5 A, -IB=6 mA

2,5

-VCE=3 V, -IC=500 mA

2200

-VCE=3 V, -IC=1,5 A

750

hFE

DC Current Gain

-VCE=3 V, -IC=4 A

650

-VBE

Base-Emitter Voltage(1&2)

-VCE=3 V, -IC=1,5 A

2,5

hfe

Small signal current gain

-VCE=3 V, -IC=1,5 A, f= 1 MHz

fhfe

Ut-off frequency

-VCE=3 V, -IC=1,5 A

kHz

Diode forward voltage

IF=1,5 A

1,5

-I(SB)

Second-breakdown

collector current

-VCE=50 V, tP= 20ms,non rep., without

heatsink

0,8

ton

Turn-on time

0,3

1.5

toff

Turn-off time

-Icon= 1,5A, -Ibon= Iboff= 6mA,

1,5

µs

Measured under pulse conditions :tP <300µs, δ <2%.

VBE decreases by about 3,6 mV/K with increasing temperature.

BD680 Datasheet(PDF) 2 Page - Comset Semiconductor

BD680 Datasheet(HTML) 2 Page - Comset Semiconductor

Html Pages

1 2 3

Datasheet Download

Link URL