BD684 datasheet(2/2 Pages) COMSET

2 / 2 page

COMSET SEMICONDUCTORS

PNP BD684

NPN BD683

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Unit

IE=0 , -VCB= -VCEOMAX=120 V

0,2

-ICBO

Collector cut-off current

IE=0 , -VCB= -1/2VCBOMAX= 60V,Tj= 150°C

-ICEO

Collector cut-off current

IB=0 , -VCE= -1/2VCEOMAX=60 V

0,2

-IEBO

Emitter cut-offcurrent

IC=0, -VEB=5 V

-VCE(SAT)

Collector-Emitter saturation

Voltage

-IC=1.5 A, -IB=6 Ma

2,5

-VCE=3 V, -IC=500 mA

2200

-VCE=3 V, -IC=1,5 A

750

hFE

DC Current Gain

-VCE=3 V, -IC=4 A

650

-VBE

Base-Emitter Voltage(1&2)

-VCE=3 V, -IC=1,5 A

2,5

hfe

Small signal current gain

-VCE=3 V, -IC=1,5 A, f= 1 MHz

fhfe

Ut-off frequency

-VCE=3 V, -IC=1,5 A

kHz

Diode forward voltage

IF=1,5 A

1,5

-I(SB)

Second-breakdown

collector current

-VCE=50 V, tP= 20ms,non rep., without

heatsink (BD676 ; VCE=40 V )

0,8

ton

Turn-on time

0,8

toff

Turn-off time

-Icon= 1,5A, Ibon= -Iboff= 6mA, VCC=30V

4,5

µs

Measured under pulse conditions :tP <300µs, δ <2%.

VBE decreases by about 3,6 mV/K with increasing temperature.

MECHANICAL DATA CASE TO-126

DIMENSIONS

inches

min

max

min

max

7.4

7.8

0.295

0.307

10.5

10.8

0.413

0.425

2.4

2.7

0.094

0.106

0.7

0.9

0.027

0.035

2.2 typ.

0.087 typ.

0.49

0.75

0.019

0.029

4.4 typ.

0.173 typ.

2.54 typ.

0.100 typ.

15.7 typ.

0.618 typ.

1.2 typ.

0.047 typ.

3.8 typ.

0.149 typ.

3.0

3.2

0.118

0.126

Pin 1 :

Emitter

Pin 2 :

Collector

Case :

Base

BD684 Datasheet(PDF) 2 Page - Comset Semiconductor

BD684 Datasheet(HTML) 2 Page - Comset Semiconductor

Html Pages

1 2

Datasheet Download

Link URL