BDY57 datasheet(2/3 Pages) COMSET

2 / 3 page

COMSET SEMICONDUCTORS

2/3

BDY57 – BDY58

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min Typ Mx Unit

BDY57

VCEO(SUS)

Collector-Emitter

Breakdown Voltage (*)

IC=100 mA, IB=0

BDY58

125

VCE(SAT)

Collector-Emitter saturation

Voltage (*)

IC=10 A, IB=1.0 A

BDY57

BDY58

-0.5

1.4

BDY57

120

V(BR)CBO

Collector-Base Breakdown

Voltage (*)

IC=5.0mA, IE=0

BDY58

160

V(BR)EBO

Emitter-Base Breakdown

Voltage (*)

IE=5.0 A, IC=0

BDY57

BDY58

-0.5

1.4

1.0

ICBO

Collector-Base Cutoff

Current

VCB=120 V

IE=0 V

BDY57

BDY58

-0.5

0.5

ICER

Collector-Emitter Cutoff

Current

VCE=80 V

RBE=10 Ω

TCASE=100°C

BDY57

BDY58

IEBO

Emitter-Base Cutoff Current

VEB=10 V

IC=0 V

BDY57

BDY58

0.25

0.5

VCE=4 V, IC=10 A

BDY57

BDY58

VCE=4 V, IC=20 A

BDY57

BDY58

-15-

h21E

Static Forward Current

transfer ratio (*)

VCE=4 V, IC=10 A, TCASE=-

30°C

BDY57

BDY58

Transition Frequency

VCE=15 V, IC=1.0 A, f=10

MHz

BDY57

BDY58

MHz

td + tr

Turn-on time

IC=15 A, IB=1.5 A

BDY57

BDY58

-0.25

µs

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