BUX39 datasheet(2/2 Pages) COMSET

2 / 2 page

NPN BUX39

COMSET SEMICONDUCTORS

3/2

IC=12 A , VCE=4.0 V

hFE

DC Current Gain (1)

IC=20 A , VCE=4.0 V

IC=12 A , IB=1.2 A

0.7

1.2

VCE(SAT)

Collector-Emitter

saturation Voltage (1)

IC=20 A , IB=2.5 A

1.25

1.6

VBE(SAT)

Base-Emitter saturation

Voltage (1)

IC=20 A , IB=2.5 A

2.1

2.5

Symbol

Ratings

Test Condition(s)Sec

Min Typ Mx

Unit

VCE=30 V , ts = 1s

IS/B

Second breakdown collector

current

VCE=135 V , ts = 1s

Transition frequency

VCE=15 V , IC=1 A , f=4 MHz

MHz

ton

Turn-on time

IC=8 A , IB=1 A , VCC=150 V

0.8

1.2

Storage time

0.55

File time

IC=8 A , VCC=150 V

IB1 = -IB2 =1 A

.15

0.25

µs

(1) Pulse Duration = 300

µs, Duty Cycle <= 2%

MECHANICAL DATA CASE TO-3

DIMENSIONS

inches

25,51

1,004

38,93

1,53

30,12

1,18

17,25

0,68

10,89

0,43

11,62

0,46

8,54

0,34

1,55

0,6

19,47

0,77

0,04

4,06

0,16

Pin 1 :

Base

Pin 2 :

Emitter

Case :

Collector

Information furnished is believed to be accurate and reliable. However, CS assumes no responsability

for the consequences of use of such information nor for errors that could appear.

Data are subject to change without notice.

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