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MJ2500 Datasheet(PDF) 2 Page - Comset Semiconductor |
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MJ2500 Datasheet(HTML) 2 Page - Comset Semiconductor |
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2 / 3 page ![]() Page 2 of 3 THERMAL CHARACTERISTICS Symbol Ratings Value Unit MJ2500 MJ3000 RthJ-C Thermal Resistance, Junction to Case MJ2501 MJ3001 1.17 °C/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Mx Unit MJ2500 MJ3000 60 - - BVCEO Collector-Emitter Breakdown Voltage (*) IC=100 mAdc, IB=0 MJ2501 MJ3001 80 - - Vdc VCE=30 Vdc, IB=0 MJ2500 MJ3000 - - ICEO Collector Cutoff Current VCE=40 Vdc, IB=0 MJ2501 MJ3001 - - 1.0 mAdc MJ2500 MJ3000 IEBO Emitter Cutoff Current VBE=5.0 Vdc, IC=0 MJ2501 MJ3001 - - 2.0 mAdc VCB=60 V, RBE=1.0 k ohm MJ2500 MJ3000 - - VCB=80 V, RBE=1.0 k ohm MJ2501 MJ3001 - - 1.0 VCB=60 V, RBE=1.0 k ohm, TC=150°C MJ2500 MJ3000 - - ICER Collector-Emitter Leakage Current VCB=80 V, RBE=1.0 k ohm, TC=150°C MJ2501 MJ3001 - - 5.0 mAdc MJ2500 MJ3000 IC=5.0 A, IB=20 mAdc MJ2501 MJ3001 - - 2.0 MJ2500 MJ3000 VCE(SAT) Collector-Emitter saturation Voltage (*) IC=10 A, IB=50 mAdc MJ2501 MJ3001 - - 4.0 Vdc MJ2500 MJ3000 VBE Base-Emitter Voltage (*) IC=5.0 Adc, VCE=3.0Vdc MJ2501 MJ3001 - - 3 V |
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