TIC116D datasheet(2/3 Pages) COMSET

2 / 3 page

TIC116A, TIC116B, TIC116C, TIC116D, TIC116E, TIC116M,

TIC116N, TIC116S

Page 2 of 3

SEMICONDUCTORS

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

tgt

Gate-controlled

Turn-on time

VAA = 30 V, RL = 6 Ω,

RGK(eff) = 100 Ω, Vin = 20 V

0.8

Circuit-communicated

Turn-off time

VAA = 30 V, RL = 6 Ω, IRM ≈ 10 A

µs

R∂JC

≤ 3

R∂JA

≤ 62.5

°C/W

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min Typ Mx Unit

IDRM

Repetitive peak off-state current

VD = Rated VDRM, RGK = 1 kΩ,

TC = 110°C

IRRM

Repetitive peak reverse current

VR = Rated VRRM, IG = 0,

TC = 110°C

IGT

Gate trigger current

VAA = 6 V, RL = 100 Ω,

tp(g) ≥ 20µs

VAA = 6 V, RL = 100 Ω,

RGK = 1 kΩ, tp(g) ≥ 20µs,

TC = -40°C

2.5

VAA = 6 V, RL = 100 Ω,

RGK = 1 kΩ, tp(g) ≥ 20µs,

0.8

1.5

VGT

Gate trigger voltage

VAA = 6 V, RL = 100 Ω,

RGK = 1 kΩ, tp(g) ≥ 20µs,

TC = 110°C

0.2

VAA = 6 V, RGK = 1 kΩ, initiating

IT = 100 mA

Holding current

VAA = 6 V, RGK = 1 kΩ, initiating

IT = 100 mA,

TC = -40°C

VTM

Peak on-state voltage

ITM = 8A (see Note6)

1.7

dv/dt

Critical rate of rise of off-state

voltage

VD = Rated VD,

TC = 110°C

100

V/µs

Note 6:

This parameters must be measured using pulse techniques, tW = 300µs, duty cycle ≤ 2 %, voltage-sensing

contacts, separate from the courrent-carrying contacts, are located within 3.2mm (1/8 inch) from de device body.

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