TIC206A, TIC206B, TIC206D, TIC206M, TIC206N, TIC206S

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SEMICONDUCTORS

DESCRIPTION

This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state

to the on-state by either polarity of gate signal with main Terminal 2 at either polarity.

ABSOLUTE MAXIMUM RATINGS

Value

Unit

Symbol

Ratings

A

B

D

M

S

N

Repetitive peak off-state voltage

(see Note1)

100

200

400

600

700

800

V

Full-cycle RMS on-state current at (or

below) 70°C case temperature (see note2)

4

A

Peak on-state surge current full-sine-wave

(see Note3)

25

A

Peak on-state surge current half-sine-wave

(see Note4)

30

A

Peak gate current

± 0.2

A

Peak gate power dissipation at (or below)

85°C case temperature (pulse width ≤200

µs)

1.3

W

Average gate power dissipation at (or

below) 85°C case (see Note5)

0.3

W

Operating case temperature range

-40 to +110

°C

Storage temperature range

-40 to +125

°C

Lead temperature 1.6 mm from case for 10

seconds

230

°C

SILICON BIDIRECTIONAL TRIODE THYRISTOR

•

4 A RMS

•

Glass Passivated Wafer

•

100 V to 800 V Off-State Voltage

•

•

Sensitive gate triacs

•

Compliance to ROHS