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TIC216D Datasheet(PDF) 2 Page - Comset Semiconductor

Part # TIC216D
Description  SILICON BIDIRECTIONAL TRIODE THYRISTOR
PDF  3 Pages
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Manufacturer  COMSET [Comset Semiconductor]
Direct Link  http://comset.halfin.com
Logo COMSET - Comset Semiconductor

TIC216D Datasheet(HTML) 2 Page - Comset Semiconductor

  TIC216D Datasheet HTML 1Page - Comset Semiconductor TIC216D Datasheet HTML 2Page - Comset Semiconductor TIC216D Datasheet HTML 3Page - Comset Semiconductor  
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TIC216A, TIC216B, TIC216D, TIC216M, TIC216N, TIC216S
Page 2 of 3
SEMICONDUCTORS
Notes:
1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal
1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate
linearly to 110°C case temperature at the rate of 150 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated
value of on-state current. Surge may be repeated after the device has returned to original thermal
equilibrium. During the surge, gate control may be lost.
4. This value applies for one 50-Hz half-sine-wave when the device is operating at (or below) the rated
value of on-state current. Surge may be repeated after the device has returned to original thermal
equilibrium. During the surge, gate control may be lost.
5. This value applies for a maximum averaging time of 20 ms.
THERMAL CHARACTERISTICS
Symbol
Ratings
Value
Unit
R∂JC
Junction to case thermal resistance
≤ 2.5
R∂JA
Junction to free air thermal resistance
≤ 62.5
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Mx Unit
IDRM
Repetitive peak off-
state current
VD = Rated VDRM, , IG = 0,
TC = 110°C
-
-
±2
mA
Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs
-
-
5
Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs
-
-
-5
Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs
-
-
-5
IGT
Gate trigger current
Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs
-
-
10
mA
Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs
-
-
2.2
Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs
-
-
-2.2
Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs
-
-
-2.2
VGT
Gate trigger voltage
Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs
-
-
3
V
Vsupply = +12 V†, IG = 0,
initiating ITM = 100 mA
-
-
30
IH
Holding current
Vsupply = -12 V†, IG = 0,
initiating ITM = -100 mA
-
-
-30
mA
Vsupply = +12 V† (seeNote7)
-
50
-
IL
Latching current
Vsupply = -12 V† (seeNote7)
-
-20
-
mA
VTM
Peak on-state voltage
ITM = ± 8.4 A, IG = 50 mA (see Note6)
-
-
±1.7
V
dv/dt
Critical rate of rise of
off-state voltage
VDRM = Rated VDRM, IG = 0
TC = 110°C
-
±50
-
dv/dt©
Critical rise of
communication voltage
VDRM = Rated VDRM, ITRM = ± 8.4A
TC = 70°C
±5
-
-
V/µs
† All voltages are whit respect to Main Terminal 1.



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