TIC246B, TIC246C, TIC246D, TIC246E, TIC246M, TIC246N,

TIC246S

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SEMICONDUCTORS

DESCRIPTION

This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state

to the on-state by either polarity of gate signal with main Terminal 2 at either polarity.

ABSOLUTE MAXIMUM RATINGS

Value

Unit

Symbol

Ratings

B

C

D

E

M

S

N

Repetitive peak off-state voltage

(see Note1)

200

300

400

500

600

700

800

V

Full-cycle RMS on-state current at (or

below) 70°C case temperature (see note2)

16

A

Peak on-state surge current full-sine-wave

(see Note3)

125

A

Peak gate current

± 1

A

Operating case temperature range

-40 to +110

°C

Storage temperature range

-40 to +125

°C

Lead temperature 1.6 mm from case for 10

seconds

230

°C

Notes:

1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal

1.

2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate

linearly to 110°C case temperature at the rate of 400 mA/°C.

3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated

value of peak reverse voltage and on-state current. Surge may be repeated after the device has

returned to original thermal equilibrium.

SILICON BIDIRECTIONAL TRIODE THYRISTOR

•

High current triacs

•

16 A RMS

•

70 A Peak

•

Glass Passivated Wafer

•

200 V to 800 V Off-State Voltage

•

•

125 A peak current

•

Compliance to ROHS