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LPD3333 Datasheet(PDF) 1 Page - LIGITEK electronics co., ltd. |
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LPD3333 Datasheet(HTML) 1 Page - LIGITEK electronics co., ltd. |
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1 / 1 page  PHOTO DIODE SILICON PIN LED LAMPS SERIES MAXIMUM RATINGS (TA=25 ) •℃ Package Dimension Description The LPD3333 series aresilicon planar P/N photodiodes incorporated in plastic package that simultaneously serve as filter and are also Transparent for infrared emission their terminals are soldering tabs arranged in 2.54mm center to center spacing due to their design the diodes can vertically be assembled on pc boards arrays can be realized by multiple arrangement versatile photodetectors are suitable for diodes as well as voltaic cell operation the signal noise ratio is particularly favorable even at low illuminance the P/N photodiode are outstanding for low junction capacitance high cut-off frequency and fast switching times. They are particularly suitable for IR sound transmission and remote control the cathode of LPD3333 photodiode is marked by a stamping on the package edge ELECTRICAL CHARACTERISTICS AT (TA= ) •℃ DOC.NO:QW0905-LPD3333 Date:17 - Aug - 2005 LPD3333 NOTE:1.All dimension are In millimeters tolerance Is ±0.25 unless otherwise noted 2.Specifications are subject to change without notice Characteristic Symbol Rating nit Characteristic Symbol Test Condition Unit Min Typ Max Reverse Break Down Voltage VBR 30 V Tstg ℃ ℃ -30 ﹣ +60 Topr Operating Temperature mW 150 PD Power Dissipation Storage Temperature -40 ﹣ +60 ns － 50 VR=10V RL=1KΩ－ － 940 － nm VR=3V f=1MHZ － 20 － pF λP=940nm _ － mV Ee=0.5mW/c㎡ VR=5V Ee=0.5mW/c㎡ 1.5 2.0 － uA VR=10V － 1.0 30 nA ID Isc Voc CT λsmax tr,tf Dark Current Short Circuit Current Open Circuit Voltage Total Capacitance Peak Wavelength of Max Sensitivity Rise Time,Fall Time 2.54TYP □0.5 TYP 1.5MAX 25.0MIN 7.6 8.6 5.9 5.0 350 1.0MIN Ee=0mW/c㎡ λP=940nm Ee=0mW/c㎡ REV: B |
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