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ACE3400 Datasheet(PDF) 2 Page - ACE Technology Co., LTD. |
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ACE3400 Datasheet(HTML) 2 Page - ACE Technology Co., LTD. |
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2 / 7 page ![]() ACE3400 Technology N-Channel Enhancement Mode MOSFET VER 1.2 2 Packaging Type SOT-23-3 3 1 2 Ordering information Selection Guide ACE3400 XX + H Electrical Characteristics TA=25 , unless otherwise ℃ noted Parameter Symbol Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250 uA 30 Gate Threshold Voltage VGS(th) VD=VGS, ID=250uA 0.8 1.6 V Gate Leakage Current IGSS VDS=0V,VGS=±12V ±100 nA VDS=24V, VGS=1.0V 1 Zero Gate Voltage Drain Current IDSS VDS=24V, VGS=0V TJ=55℃ 10 uA On-State Drain Current ID(ON) VDS≧4.5V, VGS=4.5V 10 A VGS=10V, ID=5.4A 0.030 0.038 VGS=4.5V, ID=4.6A 0.034 0.042 Drain-Source On-Resistance RDS(ON) VGS=2.5V, ID=3.8A 0.040 0.055 Ω Forward Transconductance Gfs VDS=4.5V,ID=5.4A 12 S Pin Symbol Description 1 G Gate 2 S Source 3 D Drain Halogen - free BM : SOT-23-3 Pb - free |
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