CHA5293a

Ref. : DSCHA52932123 -03-May-02

1/7

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France

Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

17-24GHz High Power Amplifier

GaAs Monolithic Microwave IC

Description

The CHA5293a is a high gain three-stage

monolithic high power amplifier. It is designed for

a wide range of applications, from military to

commercial

communication

systems. The

backside of the chip is both RF and DC grounds.

This helps simplify the assembly process.

The circuit is manufactured with a PM-HEMT

process, 0.25µm gate length, via holes through

the substrate, air bridges and electron beam

gate lithography.

It is available in chip form.

Main Features

■ Performances : 17-24GHz

■ 30dBm output power @ 1dB comp. gain

■ 17 dB ± 1dB gain

■ DC power consumption, 800mA @ 6V

■ Chip size :

4.01 x 2.52 x 0.05 mm

Vd1

Vd2

Vg3

Vd3

Vg1,2

Vd2

Vg3

Vd3

-20

-15

-10

-5

0

5

10

15

20

25

12

14

16

18

20

22

24

26

28

Frequency (GHz)

S11

S22

Typical on jig Measurements

Main Characteristics

Tamb. = 25°C

Symbol

Parameter

Min

Typ

Max

Unit

Fop

Operating frequency range

17

24

GHz

G

Small signal gain

16

17

dB

P1dB

Output power at 1dB gain compression

29

30

dBm

Id

Bias current

800

mA

ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !