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CLA101 Datasheet(PDF) 1 Page - Clairex Technologies, Inc

Part # CLA101
Description  Four Channel Phototransistor Array
PDF  1 Pages
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Manufacturer  CLAIREX [Clairex Technologies, Inc]
Direct Link  http://www.clairex.com
Logo CLAIREX - Clairex Technologies, Inc

CLA101 Datasheet(HTML) 1 Page - Clairex Technologies, Inc

  CLA101 Datasheet HTML 1Page - Clairex Technologies, Inc  
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Clairex Technologies, Inc.
1301 East Plano Parkway
Plano, Texas 75074-8524
Phone: 972-265-4900
Fax: 972-265-4949
www.clairex.com
CLA101
Four Channel Phototransistor Array
Clairex
Technologies, Inc.
September, 2001
ALL DIMENSIONS ARE IN INCHES (MILLIMETERS)
features
• Full range of sensor chips
• Full range of emitter chips
• Miniature surface mountable
package
description
The CLA101 four channel
phototransistor array can be custom
designed with photodiode or photo-
IC chips. An emitter version is also
available using same wavelength or
different wavelength die. For
additional information, call Clairex.
absolute maximum ratings (TA = 25°C unless otherwise stated)
storage temperature.......................................................................... -40°C to +100°C
operating temperature ..................................................................... -40°C to +100°C
lead soldering temperature
(1) ............................................................................ 260°C
maximum continuous current
(2) ..........................................................................50mA
peak forward current (1.0ms pulse width, 10% duty cycle) ....................................1A
reverse voltage .......................................................................................................5V
continuous power dissipation
(3).........................................................................75mW
notes:
1.
At the base of the header for 5 seconds maximum.
2.
Derate linearly 0.53mA/°C from 25°C free air temperature to TA = +100°C.
3.
Derate linearly 0.80mW/°C from 25°C free air temperature to TA = +100°C.
Clairex reserves the right to make changes at any time to improve design and to provide the best possible product.
®
electrical characteristics (TA = 25°C unless otherwise noted)
symbol
parameter
min
typ
max
units
test conditions
IL
Light current
(4)
150
-
-
µA
Ee=1mW/cm
2, V
CE=5V
Matching factor
-
-
0.4
-
(ILHIGH-ILLOW)/ILHIGH
ID
Dark current
-
-
100
nA
VCE = 10V, H=0
V(BR)CEO
Collector-emitter breakdown voltage
40
-
-
V
ICE = 0.1mA
V(BR)ECO
Emitter-collector breakdown voltage
5.0
-
-
V
IEC = 0.1mA
VCE(SAT)
Collector-emitter saturation voltage
-
-
0.4
V
Ee=20mW/cm
2, I
CE=.5mA
tr, tf
Rise and fall times
-
3.0
-
µs
RL=100Ω, VCE= 5V
Note: 4. Radiation source for light current testing is tungsten at 2854°K.
0.280 (7.11)
0.270 (6.86)
0.180 (4.57)
0.170 (4.32)
BD
=
=
AC
A
D
0.250 (6.35) min.
COMMON
0.100 (2.54) typ.
ABC
D
0.005 (0.13) nom.
0.050 (1.27) max
Case 19
COMMON
ALL DIMENSIONS ARE IN INCHES (MILLIMETERS)
Revised 3/15/06


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