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CLA101 Datasheet(PDF) 1 Page - Clairex Technologies, Inc |
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CLA101 Datasheet(HTML) 1 Page - Clairex Technologies, Inc |
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1 / 1 page ![]() Clairex Technologies, Inc. 1301 East Plano Parkway Plano, Texas 75074-8524 Phone: 972-265-4900 Fax: 972-265-4949 www.clairex.com CLA101 Four Channel Phototransistor Array Clairex Technologies, Inc. September, 2001 ALL DIMENSIONS ARE IN INCHES (MILLIMETERS) features • Full range of sensor chips • Full range of emitter chips • Miniature surface mountable package description The CLA101 four channel phototransistor array can be custom designed with photodiode or photo- IC chips. An emitter version is also available using same wavelength or different wavelength die. For additional information, call Clairex. absolute maximum ratings (TA = 25°C unless otherwise stated) storage temperature.......................................................................... -40°C to +100°C operating temperature ..................................................................... -40°C to +100°C lead soldering temperature (1) ............................................................................ 260°C maximum continuous current (2) ..........................................................................50mA peak forward current (1.0ms pulse width, 10% duty cycle) ....................................1A reverse voltage .......................................................................................................5V continuous power dissipation (3).........................................................................75mW notes: 1. At the base of the header for 5 seconds maximum. 2. Derate linearly 0.53mA/°C from 25°C free air temperature to TA = +100°C. 3. Derate linearly 0.80mW/°C from 25°C free air temperature to TA = +100°C. Clairex reserves the right to make changes at any time to improve design and to provide the best possible product. ® electrical characteristics (TA = 25°C unless otherwise noted) symbol parameter min typ max units test conditions IL Light current (4) 150 - - µA Ee=1mW/cm 2, V CE=5V Matching factor - - 0.4 - (ILHIGH-ILLOW)/ILHIGH ID Dark current - - 100 nA VCE = 10V, H=0 V(BR)CEO Collector-emitter breakdown voltage 40 - - V ICE = 0.1mA V(BR)ECO Emitter-collector breakdown voltage 5.0 - - V IEC = 0.1mA VCE(SAT) Collector-emitter saturation voltage - - 0.4 V Ee=20mW/cm 2, I CE=.5mA tr, tf Rise and fall times - 3.0 - µs RL=100Ω, VCE= 5V Note: 4. Radiation source for light current testing is tungsten at 2854°K. 0.280 (7.11) 0.270 (6.86) 0.180 (4.57) 0.170 (4.32) BD = = AC A D 0.250 (6.35) min. COMMON 0.100 (2.54) typ. ABC D 0.005 (0.13) nom. 0.050 (1.27) max Case 19 COMMON ALL DIMENSIONS ARE IN INCHES (MILLIMETERS) Revised 3/15/06 |
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