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CLD156 Datasheet(PDF) 1 Page - Clairex Technologies, Inc |
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CLD156 Datasheet(HTML) 1 Page - Clairex Technologies, Inc |
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1 / 1 page ![]() Clairex Technologies, Inc. 1301 East Plano Parkway Plano, Texas 75074-8524 Phone: 972-265-4900 Fax: 972-265-4949 www.clairex.com Clairex reserves the right to make changes at any time to improve design and to provide the best possible product. 0.330 (8.38) 0.320 (8.13) 0.365 (9.27) 0.355 (9.02) 0.164 (4.17) 0.186 (4.72) 0.200 (5.08) 0.030 (0.76) nom 1.000 (25.4) min CATHODE (long lead) Case 12 CLD156 Large Active Area Silicon Planar photodiode Clairex Technologies, Inc. May, 2001 ALL DIMENSIONS ARE IN INCHES (MILLIMETERS) features • 100° acceptance angle • 860nm peak response • TO-5 hermetic package • usable for visible through near-IR • RoHS compliant description The CLD156 and CLD156R are 0.122" x 0.222" active area silicon photodiodes featuring high linearity and low dark current. The TO-5 header provides thermal environment for reliable operation over a wide temperature range. Wide acceptance angle permits use in IR air communications, ambient light detection, safety and monitoring, security systems, etc. For additional information, call Clairex. absolute maximum ratings (TA = 25°C unless otherwise stated) storage temperature........................................................................-65°C to +150°C operating temperature.....................................................................-65°C to +150°C lead soldering temperature (1) .............................................................................260° reverse voltage ...................................................................................................30V continuous power dissipation (2) .....................................................................200mW notes: 1. 0.06” (1.5mm) from the header for 5 seconds maximum. 2. Derate linearly 1.28mW/°C free air temperature to TA = +150°C. ® electrical characteristics (TA = 25°C unless otherwise noted) symbol parameter min typ max units test conditions ISC Short-circuit current(3) - 100 - µA VBIAS = 0V, Ee = 5mW/cm 2 - - 50 nA VF = 100mV, Ee = 0 ID Dark current - - 50 nA VR = 15V, Ee = 0 VO Open circuit voltage (3) - 0.35 - V Ee = 5mW/cm 2 VBR Reverse breakdown 25 - - V IR = 100µA CJ Junction capacitance - - 400 pF VBIAS = 0V, f = 1MHz tr, tf Output rise and fall time (4) - - 10 µs RL = 1kΩ ΘHP Total angle at half sensitivity points - 100 - deg. notes: 3. Radiation source is a frosted tungsten lamp at a color temperature of 2854K or equivalent. 4. Radiation source is an AlGaAs IRED operating at a peak emission wavelength of 880nm and Ee = 20mW/cm 2. Revised 3/15/06 This product is tested to satisfy the conditions of both the CLD156 and the CLD156R. |
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