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CLE336 Datasheet(PDF) 1 Page - Clairex Technologies, Inc

Part # CLE336
Description  850nm Super-Efficient AlGaAs Emitter Narrow Radiation Pattern
PDF  1 Pages
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Manufacturer  CLAIREX [Clairex Technologies, Inc]
Direct Link  http://www.clairex.com
Logo CLAIREX - Clairex Technologies, Inc

CLE336 Datasheet(HTML) 1 Page - Clairex Technologies, Inc

  CLE336 Datasheet HTML 1Page - Clairex Technologies, Inc  
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Clairex Technologies, Inc.
1301 East Plano Parkway
Plano, Texas 75074-8524
Phone: 972-265-4900
Fax: 972-265-4949
www.clairex.com
CLE336
850nm Super-Efficient AlGaAs Emitter
Narrow Radiation Pattern
Note: 4. Ee is a measure of irradiance (power/unit area) within a 0.444" (1.128cm) diameter area, centered on the mechanical axis
of the device and spaced 2.54" (6.45cm) from the lens side of the tab. This is geometrically equivalent to a 10° cone.
Clairex
Technologies, Inc.
April, 2006
Clairex reserves the right to make changes at any time to improve design and to provide the best possible product.
®
absolute maximum ratings (TA = 25°C unless otherwise stated)
storage temperature....................................................................... -65°C to +150°C
operating temperature.................................................................... -65°C to +150°C
lead soldering temperature
(1).......................................................................... 260°C
continuous forward current
(2).........................................................................100mA
peak forward current (1.0ms pulse width, 10% duty cycle) ..................................1A
reverse voltage.....................................................................................................5V
continuous power dissipation
(3) ....................................................................200mW
notes:
1.
0.06” (1.5mm) from the header for 5 seconds maximum.
2.
Derate linearly 0.64mA/°C free air temperature to TA = +150°C.
3.
Derate linearly 1.28mW/°C free air temperature to TA = +150°C.
electrical characteristics (TA = 25°C unless otherwise noted)
symbol
parameter
min
typ
max
units
test conditions
PO
Total power output
10
20
-
mW
IF = 100mA
Ee
Irradiance
(4)
-
3.5
-
mW/cm
2
IF = 100mA
VF
Forward voltage
-
1.7
1.9
V
IF = 100mA
IR
Reverse current
-
-
10
µA
VR = 5V
λP
Peak emission wavelength
-
845
-
nm
IF = 100mA
BW
Spectral bandwidth at half power points
-
40
-
nm
IF = 100mA
θHP
Emission angle at half power points
-
9.0
-
deg.
IF = 100mA
tr
Radiation rise time
-
11
-
ns
Tf
Radiation fall time
-
7.0
-
ns
IF = 100mA, f = 1KHz, Duty
Cycle = 50%
0.147 (3.73)
0.137 (3.48)
0.205 (5.21)
0.215 (5.46)
0.100 (2.54) dia.
0.025 (0.64) max.
1.00 (25.4) min.
0.190 (4.83)
0.176 (4.47)
0.165 (4.19)
0.145 (3.68)
0.019 (0.48)
0.016 (0.41)
0.156 (3.96)
0.136 (3.45)
CATHODE
ANODE
0.050 (1.27) nom
Case 7
ALL DIMENSIONS ARE IN INCHES (MILLIMETERS)
(connected
to case)
features
• 150°C operating temperature
• ± 4.5° beam angle
• exceptionally high power output
• 845nm wavelength
• TO-46 hermetic package
• cathode connected to case
• RoHS compliant
description
The CLE336 is an advanced, high-
efficiency, high speed AlGaAs
infrared emitting diode. Output
power exceeds standard AlGaAs
emitters by 50%. A special lens
provides a sharply focused beam
pattern. The CLE336 is designed
for use anywhere a narrow beam
pattern and very high output are
required.
Revised 11/08/06


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