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CLE336 Datasheet(PDF) 1 Page - Clairex Technologies, Inc |
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CLE336 Datasheet(HTML) 1 Page - Clairex Technologies, Inc |
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1 / 1 page ![]() Clairex Technologies, Inc. 1301 East Plano Parkway Plano, Texas 75074-8524 Phone: 972-265-4900 Fax: 972-265-4949 www.clairex.com CLE336 850nm Super-Efficient AlGaAs Emitter Narrow Radiation Pattern Note: 4. Ee is a measure of irradiance (power/unit area) within a 0.444" (1.128cm) diameter area, centered on the mechanical axis of the device and spaced 2.54" (6.45cm) from the lens side of the tab. This is geometrically equivalent to a 10° cone. Clairex Technologies, Inc. April, 2006 Clairex reserves the right to make changes at any time to improve design and to provide the best possible product. ® absolute maximum ratings (TA = 25°C unless otherwise stated) storage temperature....................................................................... -65°C to +150°C operating temperature.................................................................... -65°C to +150°C lead soldering temperature (1).......................................................................... 260°C continuous forward current (2).........................................................................100mA peak forward current (1.0ms pulse width, 10% duty cycle) ..................................1A reverse voltage.....................................................................................................5V continuous power dissipation (3) ....................................................................200mW notes: 1. 0.06” (1.5mm) from the header for 5 seconds maximum. 2. Derate linearly 0.64mA/°C free air temperature to TA = +150°C. 3. Derate linearly 1.28mW/°C free air temperature to TA = +150°C. electrical characteristics (TA = 25°C unless otherwise noted) symbol parameter min typ max units test conditions PO Total power output 10 20 - mW IF = 100mA Ee Irradiance (4) - 3.5 - mW/cm 2 IF = 100mA VF Forward voltage - 1.7 1.9 V IF = 100mA IR Reverse current - - 10 µA VR = 5V λP Peak emission wavelength - 845 - nm IF = 100mA BW Spectral bandwidth at half power points - 40 - nm IF = 100mA θHP Emission angle at half power points - 9.0 - deg. IF = 100mA tr Radiation rise time - 11 - ns Tf Radiation fall time - 7.0 - ns IF = 100mA, f = 1KHz, Duty Cycle = 50% 0.147 (3.73) 0.137 (3.48) 0.205 (5.21) 0.215 (5.46) 0.100 (2.54) dia. 0.025 (0.64) max. 1.00 (25.4) min. 0.190 (4.83) 0.176 (4.47) 0.165 (4.19) 0.145 (3.68) 0.019 (0.48) 0.016 (0.41) 0.156 (3.96) 0.136 (3.45) CATHODE ANODE 0.050 (1.27) nom Case 7 ALL DIMENSIONS ARE IN INCHES (MILLIMETERS) (connected to case) features • 150°C operating temperature • ± 4.5° beam angle • exceptionally high power output • 845nm wavelength • TO-46 hermetic package • cathode connected to case • RoHS compliant description The CLE336 is an advanced, high- efficiency, high speed AlGaAs infrared emitting diode. Output power exceeds standard AlGaAs emitters by 50%. A special lens provides a sharply focused beam pattern. The CLE336 is designed for use anywhere a narrow beam pattern and very high output are required. Revised 11/08/06 |
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