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ATP302 Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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ATP302 Datasheet(HTML) 2 Page - Sanyo Semicon Device |
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2 / 4 page ![]() ATP302 No. A1654-2/4 Continued from preceding page. Parameter Symbol Conditions Ratings Unit min typ max Static Drain-to-Source On-State Resistance RDS(on)1 ID=--35A, VGS=--10V 10 13 mΩ RDS(on)2 ID=--35A, VGS=--4.5V 13 18 mΩ Input Capacitance Ciss VDS=--20V, f=1MHz 5400 pF Output Capacitance Coss VDS=--20V, f=1MHz 500 pF Reverse Transfer Capacitance Crss VDS=--20V, f=1MHz 370 pF Turn-ON Delay Time td(on) See specified Test Circuit. 35 ns Rise Time tr See specified Test Circuit. 430 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 420 ns Fall Time tf See specified Test Circuit. 500 ns Total Gate Charge Qg VDS=--36V, VGS=--10V, ID=--70A 115 nC Gate-to-Source Charge Qgs VDS=--36V, VGS=--10V, ID=--70A 20 nC Gate-to-Drain “Miller” Charge Qgd VDS=--36V, VGS=--10V, ID=--70A 25 nC Diode Forward Voltage VSD IS=--70A, VGS=0V --1.0 --1.5 V Package Dimensions unit : mm (typ) 7057-001 Switching Time Test Circuit Avalanche Resistance Test Circuit 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : ATPAK 0.4 0.55 13 2 6.5 0.6 4 0.8 1.5 0.4 2.6 4.6 0.4 2.3 2.3 PW=10μs D.C.≤1% P.G 50Ω G S D ID= --35A RL=1.03Ω VDD= --36V VOUT VIN 0V --10V VIN ATP302 50Ω 0V --10V ≥50Ω RG VDD L ATP302 |
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