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ATP302 Datasheet(PDF) 2 Page - Sanyo Semicon Device

Part # ATP302
Description  P-Channel Silicon MOSFET General-Purpose Switching Device Applications
PDF  4 Pages
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

ATP302 Datasheet(HTML) 2 Page - Sanyo Semicon Device

  ATP302 Datasheet HTML 1Page - Sanyo Semicon Device ATP302 Datasheet HTML 2Page - Sanyo Semicon Device ATP302 Datasheet HTML 3Page - Sanyo Semicon Device ATP302 Datasheet HTML 4Page - Sanyo Semicon Device  
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ATP302
No. A1654-2/4
Continued from preceding page.
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=--35A, VGS=--10V
10
13
mΩ
RDS(on)2
ID=--35A, VGS=--4.5V
13
18
mΩ
Input Capacitance
Ciss
VDS=--20V, f=1MHz
5400
pF
Output Capacitance
Coss
VDS=--20V, f=1MHz
500
pF
Reverse Transfer Capacitance
Crss
VDS=--20V, f=1MHz
370
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
35
ns
Rise Time
tr
See specified Test Circuit.
430
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
420
ns
Fall Time
tf
See specified Test Circuit.
500
ns
Total Gate Charge
Qg
VDS=--36V, VGS=--10V, ID=--70A
115
nC
Gate-to-Source Charge
Qgs
VDS=--36V, VGS=--10V, ID=--70A
20
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=--36V, VGS=--10V, ID=--70A
25
nC
Diode Forward Voltage
VSD
IS=--70A, VGS=0V
--1.0
--1.5
V
Package Dimensions
unit : mm (typ)
7057-001
Switching Time Test Circuit
Avalanche Resistance Test Circuit
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : ATPAK
0.4
0.55
13
2
6.5
0.6
4
0.8
1.5
0.4
2.6
4.6
0.4
2.3
2.3
PW=10μs
D.C.≤1%
P.G
50Ω
G
S
D
ID= --35A
RL=1.03Ω
VDD= --36V
VOUT
VIN
0V
--10V
VIN
ATP302
50Ω
0V
--10V
≥50Ω
RG
VDD
L
ATP302



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