SSF1016 datasheet(2/5 Pages) SILIKRON

2 / 5 page

©Silikron Semiconductor CO.,LTD.

2009.8.10

Version : 1.0

page

2of5

SSF1016

Total gate charge

—

ID=30A,VGS=10V

VDD=30V

Qgs Gate-to-Source charge

—

Qgd Gate-to-Drain("Miller") charge

—

td(on) Turn-on delay time

—

18.2

VDD=30V

ID=2A ,RL=15Ω

RG=2.5Ω

VGS=10V

Rise time

—

15.6

td(off) Turn-Off delay time

—

70.5

Fall time

—

13.8

Ciss Input capacitance

—

3150

VGS=0V

VDS=25V

f=1.0MHZ

Coss Output capacitance

—

350

Crss Reverse transfer capacitance

—

240

Source-Drain Ratings and Characteristics

Parameter

Min.

Typ.

Max.

Units

Test Conditions

Continuous Source Current

(Body Diode)

—

MOSFET symbol

showing the

integral reverse

p-n junction diode.

ISM

Pulsed Source Current

(Body Diode) ①

—

300

VSD Diode Forward Voltage

—

1.3

TJ=25ْC,IS=60A,VGS=0V ③

trr

Reverse Recovery Time

－

—

TJ=25ْC,IF=75A

di/dt=100A/μs ③

Qrr Reverse Recovery Charge

－

107

—

μC

ton Forward Turn-on Time

Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)

EAS Test Circuit:

Gate Charge Test Circuit:

Notes:

①

Repetitive rating; pulse width limited by max junction temperature.

②

Test condition: L =0.3mH, VDD = 50V,Id=37A

③

Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω Starting TJ = 25°C

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