SSF3637

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

V

V =V

GS(th)

DS

-1

-1.8

-3

V

V =-10V, I

GS

39

52

Drain-Source On-State Resistance

mΩ

V =-4.5V, I

GS

67

87

Forward Transconductance

g

V =-5V, I

FS

DS

8

S

DYNAMIC CHARACTERISTICS (Note4)

Input Capacitance

C

700

PF

lss

Output Capacitance

120

PF

V =-15V,V

Reverse Transfer Capacitance

DS

F=1.0MHz

75

PF

SWITCHING CHARACTERISTICS (Note 4)

Turn-on Delay Time

t

9

nS

d(on)

Turn-on Rise Time

t

5

nS

r

Turn-Off Delay Time

30

nS

V =-15V, I

DD

V =-10V,R

Turn-Off Fall Time

GS

15

nS

Total Gate Charge

Q

14.7

nC

g

Gate-Source Charge

2

nC

V =-15V, I

Gate-Drain Charge

DS

=-10V

GS

3.8

nC

DRAIN-SOURCE DIODE CHARACTERISTICS

Diode Forward Voltage (Note 3)

V

V =0V,I =-1A

-0.8

-1

V

SD

GS

S

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production testing.

©Silikron Semiconductor CO.,LTD.

2

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