SSF9926

Gate-Body Leakage Current

I

V =±10V,V =0V

±100

nA

GSS

GS

DS

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

V

V =V

GS(th)

DS

0.6

0.75

1

V

V =4.5V, I

GS

22.5

28

mΩ

Drain-Source On-State Resistance

V =2.5V, I

GS

32

44

mΩ

Forward Transconductance

g

V =5V,I

FS

DS

18

S

DYNAMIC CHARACTERISTICS (Note4)

Input Capacitance

C

550

PF

lss

Output Capacitance

140

PF

V =8V,V

DS

F=1.0MHz

Reverse Transfer Capacitance

C

120

PF

rss

SWITCHING CHARACTERISTICS (Note 4)

Turn-on Delay Time

t

9.6

nS

d(on)

Turn-on Rise Time

t

6.5

nS

r

Turn-Off Delay Time

28

nS

V =10V,V =4.5V,R

Turn-Off Fall Time

DS

GS

6

nS

Total Gate Charge

Q

6

nC

g

Gate-Source Charge

1.5

nC

V =10V,I

Gate-Drain Charge

DS

1.5

nC

DRAIN-SOURCE DIODE CHARACTERISTICS

Diode Forward Voltage (Note 3)

V

V =0V,I =1.7A

1

1.2

V

SD

GS

S

NOTES:

1.

Repetitive Rating: Pulse width limited by maximum junction temperature.

2.

3.

Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4.

Guaranteed by design, not subject to production testing.

©Silikron Semiconductor CO.,LTD.

2

http://www.silikron.com

v1.0