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TS4448RW Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TS4448RW Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 2 page ![]() TS4448 RW 350mW High Speed SMD Switching Diode Extremely thin/leadless package High mounting capability,strong surage with stand, high reliability. Pb free version and RoHS compliant Min Max Min Max Case :1005 standard package, molded plastic 2.40 2.60 0.095 0.102 1.10 1.30 0.043 0.051 0.70 0.90 0.027 0.035 Typ. 0.50 Typ. 0.02 Typ. 1.00 Typ. 0.04 Package 1005 Maximum Ratings 1 μsec 8.3 msec Electrical Characteristics Reverse Breakdown Voltage (Note 2) IF= 5mA IF= 100mA VR= 20V VR= 80V Junction Capacitance VR=0, f=1.0MHz Reverse Recovery Time (Note3) Notes:1. Valid provided that electrodes are kept at ambient temperature Notes:2. Test Condition : IR=100μA Notes:3. Test Condition : IF=IR=10mA, RL=100Ω, IRR=1mA V °C TJ, TSTG Units V - Min V(BR) Repetitive Peak Reverse Voltage PD VRRM Pulse Width= Pulse Width= Rating at 25°C ambient temperature unless otherwise specified. Type Number mA mW V A 2.0 °C/W 100 D Mean Forward Current IO Thermal Resistance (Junction to Ambient) (Note 1) 500 RθJA Units pF Trr ns - nA 9.0 CJ 9 - - Junction and Storage Temperature Range Reverse Leakage Current Forward Voltage Max Type Number Symbol VF 0.62 1.00 IR - -40 to + 125 80 25 0.72 100 1005 Maximum Ratings and Electrical Characteristics Mechanical Data Terminal: Gold plated, solderable per MIL-STD-750, method 2026 guaranteed Unit (mm) Unit (inch) High temperature soldering guaranteed: 260°C/10s Polarity : Indicated by cathode band Dimensions A Designed for mounting on small surface. Non-Repetitive Peak Forward Surge Current IFSM Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code Power Dissipation Symbol 125 Weight : 0.006 gram (approximately) B C E Value 200 1.0 Ordering Information Part No. Packing TS4448 RW 4Kpcs / 7" Reel Small Signal Diode Features Version : C09 A B D C E |
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