TSC5304D datasheet(2/6 Pages) TSC

2 / 6 page

TSC5304D

High Voltage NPN Transistor with Diode

2/6

Version: C08

Thermal Performance

Parameter

Symbol

Limit

Unit

Thermal Resistance - Junction to Case

RӨJC

3.57

oC/W

Thermal Resistance - Junction to Ambient

RӨJA

oC/W

Electrical Specifications (Ta = 25oC unless otherwise noted)

Parameter

Conditions

Symbol

Min

Typ

Max

Unit

Static

Collector-Base Voltage

IC =1mA, IB =0

BVCBO

700

Collector-Emitter Breakdown Voltage

IC =10mA, IE =0

BVCEO

400

Emitter-Base Breakdown Voltage

IE =1mA, IC =0

BVEBO

Collector Cutoff Current

VCB =700V, IE =0

ICBO

100

Collector Cutoff Current

VCE =400V, IB =0

ICEO

250

Emitter Cutoff Current

VEB =7V, IC =0

IEBO

IC =0.5A, IB =0.1A

VCE(SAT)1

0.25

0.7

IC =1A, IB =0.2A

VCE(SAT)2

0.5

IC =2.5A, IB =0.5A

VCE(SAT)3

1.2

1.5

Collector-Emitter Saturation Voltage

IC =4A, IB =1A

VCE(SAT)4

0.5

IC =1A, IB =0.2A

VBE(SAT)1

1.1

Base-Emitter Saturation Voltage

IC =2A, IB =0.5A

VBE(SAT)2

1.2

VCE =5V, IC =10mA

VCE =5V, IC =1A

DC Current Gain

VCE =5V, IC =2A

Hfe

Forward Voltage Drop

IF =2A

Turn On Time

tON

0.2

0.6

Storage Time

tSTG

3.0

4.5

Fall Time

VCC =250V, IC =1A,

IB1=IB2=0.2A, tp=25uS

Duty Cycle<1%

0.2

0.3

Notes: Pulsed duration =380uS, duty cycle ≤2%

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