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TSM6963SD Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSM6963SD Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 6 page  TSM6963SD 20V Dual P-Channel MOSFET 1/1 Version: B09 TSSOP-8 Features ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance Application ● Load Switch ● PA Switch Ordering Information Part No. Package Packing TSM6963SDCA RV TSSOP-8 2.5Kpcs / 13” Reel Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±12 V Continuous Drain Current, VGS @4.5V. ID -4.5 A Pulsed Drain Current, VGS @4.5V IDM -16 A Continuous Source Current (Diode Conduction) a,b IS -1.0 A Ta = 25 oC 1.14 Maximum Power Dissipation Ta = 70 oC PD 0.73 W Operating Junction Temperature TJ +150 oC Operating Junction and Storage Temperature Range TJ, TSTG - 55 to +150 oC Thermal Performance Parameter Symbol Limit Unit Junction to Foot (Drain) Thermal Resistance RӨJF 75 oC/W Junction to Ambient Thermal Resistance (PCB mounted) RӨJA 90 oC/W Notes: a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Block Diagram Dual P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) ID (A) 30 @ VGS = -4.5V -4.5 42 @ VGS = -2.5V -3 -20 68 @ VGS = -1.8V -2 Pin Definition: 1. Drain 1 8. Drain 2 2. Source 1 7. Source 2 3. Source 1 6. Source 2 4. Gate 1 5. Gate 2 |
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