TSM9426D datasheet(2/4 Pages) TSC

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Preliminary

TSM9426D

20V Dual N-Channel MOSFET w/ESD Protected

2/4

Version: Preliminary

Electrical Specifications (Ta = 25oC unless otherwise noted)

Parameter

Conditions

Symbol

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250uA

BVDSS

Gate Threshold Voltage

VDS = VGS, ID = 250uA

VGS(TH)

0.5

0.75

1.0

Gate Body Leakage

VGS = ±10V, VDS = 0V

IGSS

±10

Zero Gate Voltage Drain Current

VDS = 16V, VGS = 0V

IDSS

On-State Drain Current

VDS =5V, VGS = 4.5V

ID(ON)

VGS = 10V, ID = 9.4A

VGS = 4.5V, ID = 8A

12.6

VGS = 2.5V, ID = 6A

16.5

Drain-Source On-State Resistance

VGS = 1.8V, ID = 4A

RDS(ON)

23.4

mΩ

Forward Transconductance

VDS = 5V, ID = 8A

gfs

Diode Forward Voltage

IS = 1A, VGS = 0V

VSD

0.72

Dynamic

Total Gate Charge

4.65

6.05

Gate-Source Charge

Qgs

1.12

1.46

Gate-Drain Charge

VDS = 10V, ID = 8A,

VGS = 4.5V

Qgd

3.72

4.84

Input Capacitance

Ciss

36.45

Output Capacitance

Coss

183.88

Reverse Transfer Capacitance

VDS = 10V, VGS = 0V,

f = 1.0MHz

Crss

14.57

Switching

Turn-On Delay Time

td(on)

487.6

Turn-On Rise Time

800.4

Turn-Off Delay Time

td(off)

1728

Turn-Off Fall Time

VDD = 10V, RL = 1.2Ω,

ID = 1A, VGEN = 10V,

RG = 3Ω

6180

Notes:

a. pulse test: PW

300µS, duty cycle

b. For DESIGN AID ONLY, not subject to production testing.

b. Switching time is essentially independent of operating temperature.

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