PUMX1_4

© NXP B.V. 2010. All rights reserved.

Product data sheet

Rev. 04 — 20 January 2010

2 of 8

NXP Semiconductors

PUMX1

40 V, 100 mA NPN general-purpose double transistor

3.

Ordering information

4.

Marking

[1]

* = -: made in Hong Kong

* = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China

5.

Limiting values

[1]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

Table 3.

Ordering information

Type number

Package

Name

Description

Version

PUMX1

SC-88

plastic surface-mounted package; 6 leads

SOT363

Table 4.

Marking codes

Type number

Marking code[1]

PUMX1

Z*Z

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per transistor

collector-base voltage

open emitter

-

50

V

collector-emitter voltage

open base

-

40

V

emitter-base voltage

open collector

-

5

V

collector current

-

100

mA

peak collector current

-

200

mA

peak base current

-

200

mA

total power dissipation

200

mW

Per device

total power dissipation

[1] -300

mW

junction temperature

-

150

°C

ambient temperature

−65

+150

°C

storage temperature

−65

+150

°C