SB120 thru SB1200

FEATURES

Metal-Semiconductor junction with guard ring

Low forward voltage drop

High current capability

The plastic material carries UL recognition 94V-0

For use in low voltage,high frequency inverters,free

wheeling,and polarity protection applications

MECHANICAL DATA

Case : JEDEC DO-41 molded plastic

Polarity : Color band denotes cathode

Weight : 0.318 grams

Mounting position : Any

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25

ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%

SCHOTTKY BARRIER RECTIFIERS

REVERSE VOLTAGE - 20 to 200 Volts

FORWARD CURRENT - 1.0 Amperes

All Dimensions in millimeter

Max.

Min.

DO-41

Dim.

A

D

C

B

25.4

5.20

-

4.20

0.70

2.00

2.70

0.90

DO-41

A

C

D

A

B

Epitaxial construction

Compact Technology

CTC0074 Ver. 2.0

1 of 2

SB120 thru SB1200

PARAMETER

SYMBOL

SB

120

SB

130

SB

14 0

SB

150

SB

160

SB

180

SB

1100

SB

1150

SB

1200

UNIT

Maximum repetitive peak reverse voltage

20

30

40

50

60

80

100

150

200

V

Maximum RMS voltage

14

21

28

35

42

56

70

105

140

V

Maximum DC blocking voltage

20

30

40

50

60

80

100

150

200

V

Maximum average forward rectified current

A

Peak forward surge current, 8.3ms single half

sine-wave superimposed on rated load

Maximum Instantaneous Forward Voltage @ 1.0A

0.87

0.90

V

Maximum DC Reverse Current @ TA=25°C

at Rated DC Blocking Voltage @ TA=100°C

Typical Junction Capacitance

pF

Typical Thermal Resistance

°C/W

Operating Temperature Range

°C

Storage Temperature Range

°C

1.0

30.0

2.0

10.0

A

0.50

0.85

0.5

0.2

mA

-55 to +150

0.70

70

70

50

40

30

-55 to +125