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UTC2SA1015 Datasheet(PDF) 1 Page - Unisonic Technologies

Part # UTC2SA1015
Description  PNP EPITAXIAL SILICON TRANSISTOR
PDF  2 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UTC2SA1015 Datasheet(HTML) 1 Page - Unisonic Technologies

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UTC2SA1015
PNP EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD
1
QW-R201-004,A
LOW FREQUENCY PNP
AMPLIFIER TRANSISTOR
FEATURES
*Collector-Emitter Voltage:
BVCEO=-50V
*Collector current up to 150mA
*High hFE linearity
*Complement to 2SC1815
TO-92
1
1:EMITTER 2:COLLECTOR 3: BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER
SYMBOL
RATING
UNIT
Collector-base voltage
VCBO
-50
V
Collector-emitter voltage
VCEO
-50
V
Emitter-base voltage
VEBO
-5
V
Collector dissipation
Pc
400
mW
Collector current
Ic
-150
mA
Base current
IB
-50
mA
Junction Temperature
Tj
125
°C
Storage Temperature
TSTG
-65 ~ +150
°C
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
BVCBO
Ic=-100
µA,IE=0
-50
V
Collector-emitter breakdown voltage
BVCEO
Ic=-10mA,IB=0
-50
V
Emitter-base breakdown voltage
BVEBO
IE=-10
µA,Ic=0
-5
V
Collector cut-off current
ICBO
VCB=-50V,IE=0
-100
nA
Emitter cut-off current
IEBO
VEB=-5V,Ic=0
-100
nA
DC current gain(note)
hFE1
hFE2
VCE=-6V,Ic=-2mA
VCE=-6V,Ic=-150mA
70
25
400
Collector-emitter saturation voltage
VCE(sat)
Ic=-100mA,IB=-10mA
-0.1
-0.3
V
Base-emitter saturation voltage
VBE(sat)
Ic=-100mA,IB=-10mA
-1.1
V
Current gain bandwidth product
fT
VCE=-10V,Ic=-1mA
80
MHz
Output capacitance
Cob
VCB=-10V,IE=0,f=1MHz
4.0
7.0
pF
Noise Figure
NF
Ic=-0.1mA,VCE=-6V
RG=1k
Ω,f=100Hz
0.5
6
dB


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