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2SB772 Datasheet(PDF) 1 Page - Unisonic Technologies |
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2SB772 Datasheet(HTML) 1 Page - Unisonic Technologies |
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1 / 2 page  UTC2SB772 PNP EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R204-002,A MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES *High current output up to 3A *Low saturation voltage *Complement to 2SD882 TO-126 1 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -5 V Collector Dissipation( Tc=25 °C) Pc 10 W Collector Dissipation( Ta=25 °C) Pc 1 W Collector Current(DC) Ic -3 A Collector Current(PULSE) Ic -7 A Base Current IB -0.6 A Junction Temperature Tj 150 °C Storage Temperature TSTG -55 ~ +150 °C ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector Cut-Off Current ICBO VCB=-30V,IE=0 -1000 nA Emitter Cut-Off Current IEBO VEB=-3V,Ic=0 -1000 nA DC Current Gain(note 1) hFE1 hFE2 VCE=-2V,Ic=-20mA VCE=-2V,Ic=-1A 30 100 200 150 400 Collector-Emitter Saturation Voltage VCE(sat) Ic=-2A,IB=-0.2A -0.3 -0.5 V Base-Emitter Saturation Voltage VBE(sat) Ic=-2A,IB=-0.2A -1.0 -2.0 V Current Gain Bandwidth Product fT VCE=-5V,Ic=-0.1A 80 MHz Output Capacitance Cob VCB=-10V,IE=0,f=1MHz 45 pF Note 1:Pulse test:PW<300 µs,Duty Cycle<2% |
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