POWERSEM GmbH, Walpersdorfer Str. 53

D - 91126 Schwabach

Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20

Fig. 1 Forward current versus

voltage drop per diode

Fig. 2 Surge overload current

per diode I

t: duration

Fig. 3

(1-10ms) per diode (or thyristor)

Fig. 4 Power dissipation versus direct output current and ambient temperature

Fig.5 Maximum forward current

at case temperature

Fig. 6 Transient thermal impedance per diode (or thyristor), calculated

0.4

0.6

0.8

1

1.2

1.4

1.6

10

0

10

1

10

2

10

3

t[ms]

I

(A)

FSM

TVJ=45°C

TVJ=150°C

400

360

I

------

I

FSM

F(OV)

0 VRRM

1/2 VRRM

1 VRRM

2

4

6

10

TVJ=45°C

TVJ=150°C

t [ms]

1

10

10

2

3

As

2

30

10

0

20

40

60

80

50

55

60

65

70

75

80

85

90

95

100

105

110

115

120

125

130

135

140

145

150

TC

°C

DC

sin.180°

rec.120°

re c. 60 °

re c. 30 °

5.57

2.23

1.12

0.57

0.29 0.01

= RTHCA [K/W]

IF AV M

[A]

Tamb

[K ]

05 0

10 0

15 0

[W ]

PV TO T

PSB 35

50

100

150

200

0

10

20

30

40

DC

.180°

.120°

.60°

sin

rec

rec

rec.30°

T (°C)

C

IdAV

[A]

0.01

0.1

1

10

1

2

3

4

5

K/W

Z th

t[s]

Z thJK

Z thJC

1.0

1.5

2.0

2.5

3.0

0

50

100

150

200

V [V]

F

IF

[A]

1:T

= 150°C

VJ

2:T

= 25°C

VJ

1

2