2SC2328A datasheet(2/2 Pages) UTC

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UTC 2SC2328A

NPN EPITAXIAL SILICON TRANSISTOR

UTC UNISONIC TECHNOLOGIES CO., LTD. 2

QW-R211-008,A

TYPICAL CHARACTERISTIC CURVES

2468

200

400

600

800

1000

1200

1400

IB=7mA

IB=6mA

IB=5mA

IB=4mA

IB=3mA

IB=2mA

IB=1mA

VCE(V),COLLECTOR-EMITTER VOLTAGE

FIG.1 STATIC CHARACTERISTIC

0 0.2

0.4

0.6

0.8

1.0

1.2

200

400

600

800

1000

1200

1400

VBE(V),BASE-EMITTER VOLTAGE

FIG.2 BASE-EMITTER ON VLOTAGE

1.4

VCE=2V

30 100 300 1000

3000

100

300

500

1000

Ic(mA),COLLECTOR CURRENT

FIG.3 DC CURRENT GAIN

VCE=2V

30 100 300 1000

3000

0.01

0.03

0.05

0.1

0.3

0.5

Ic(mA),COLLECTOR CURRENT

FIG.4 COLLECTOR-EMITTER SATURATION VOLTAGE

Ic=50lB

Ta=25°C

80 100 120 140

160

0.2

0.4

0.6

0.8

1.0

1.2

Ta(°C),AMBIENT TEMPERATURE

FIG.5 POWER DERATING

0.3

0.01

VCE(V), COLLECTOR EMITTER VOLTAGE

FIG.6 SAFE OPERATING AREA

0.5

0.1

0.03

0.05

0.1

0.3

0.5

50 100

Ic(MAX)

Ic(MAX) PULSE

Ta=25°C

D.C

OPERATION

1ms

VCEO MAX

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