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PSIG100/06 Datasheet(PDF) 1 Page - Powersem GmbH

Part # PSIG100/06
Description  IGBT Module
PDF  2 Pages
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Manufacturer  POWERSEM [Powersem GmbH]
Direct Link  http://www.powersem.com
Logo POWERSEM - Powersem GmbH

PSIG100/06 Datasheet(HTML) 1 Page - Powersem GmbH

  PSIG100/06 Datasheet HTML 1Page - Powersem GmbH PSIG100/06 Datasheet HTML 2Page - Powersem GmbH  
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IGBT Module
I
C25
= 93 A
V
CES
= 600 V
V
CE(sat)typ. = 2.4 V
Features
•
Package with DCB ceramic
base plate
•
Isolation voltage 3000 V
∼
•
Planar glass passivated chips
•
Low forward voltage drop
•
Leads suitable for PC board
soldering
•
UL registered, E 148688
Applications
•
AC and DC motor control
•
AC servo and robot drives
•
power supplies
•
welding inverters
Advantages
•
Easy to mount with two screws
•
Space and weight savings
•
Improved temperature and
power cycling capability
•
High power density
•
Small and light weight
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
ECO-PAC
TM 2
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
Preliminary Data Sheet
*NTC optional
Caution: These Devices are sensitive
to electrostatic discharge. Users should
observe proper ESD handling precautions.
PSIS 100/06*
PSSI 100/06*
PSI 100/06*
PSIG 100/06
PSI 100/06*
PSIS 100/06*
PSSI 100/06*
X15
X16
NTC
AC 1
L9
IK 10
F1
X15
X16
NTC
AC 1
L9
IK 10
T16
IGBTs
Symbol
Conditions
Maximum Ratings
V
CES
T
VJ = 25°C to 150°C
600
V
V
GES
± 20
V
I
C25
T
C = 25°C
93
A
I
C80
T
C = 80°C
63
A
I
CM
V
GE = ±15 V; RG = 15 Ω; TVJ = 125°C
150
A
V
CEK
RBSOA, Clamped inductive load; L = 100 µH
V
CES
t
SC
V
CE = VCES; VGE = ±15 V; RG = 15 Ω; TVJ = 125°C
10
µs
(SCSOA)
non-repetitive
P
tot
T
C = 25°C
294
W
Symbol
Conditions
Characteristic Values
(T
VJ = 25°C, unless otherwise specified)
min.
typ.
max.
V
CE(sat)
I
C = 100 A; VGE = 15 V; TVJ =
25°C
2.4
2.8
V
T
VJ = 125°C
2.8
V
V
GE(th)
I
C = 1.5 mA; VGE = VCE
4.5
6.5
V
I
CES
V
CE = VCES;VGE = 0 V;
T
VJ =
25°C
1.4 mA
T
VJ = 125°C
6.5 mA
I
GES
V
CE = 0 V; VGE =
± 20 V
150
nA
t
d(on)
150
ns
t
r
60
ns
t
d(off)
450
ns
t
f
40
ns
E
on
3.2
mJ
E
off
2.2
mJ
C
ies
V
CE = 25 V; VGE = 0 V; f = 1 MHz
4.2
nF
R
thJC
(per IGBT)
0.43 K/W
R
thJH
with heatsink compound (0.42 K/m.K; 50 µm)
0.85
K/W
Inductive load, T
VJ = 125°C
V
CE = 300 V; IC = 60 A
V
GE = 15/0 V; RG = 15 Ω
PSIG 100/06
LMN
AIJK
S
L9
K10
GH 10
E2
X13
X15
NTC
X16
E2
VX 18
OP 9


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