H337 datasheet(1/2 Pages) HUASHAN

Part #	H337

Description	NPN SILICON TRANSISTOR

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Manufacturer	HUASHAN [SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD]

Direct Link	http://www.huashan.com.cn

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Shantou Huashan Electronic Devices Co.,Ltd.

█ SWITCHING AND AMPLFIER APPLICATIONS

Suitable for AF-Driver stages and low power output stages

█ ABSOLUTE MAXIMUM RATINGS（T

a=25℃）

█ ELECTRICAL CHARACTERISTICS（T

a=25℃）

Symbol

Characteristics

Min

Typ

Max

Unit

Test Conditions

BVCBO

Collector-Base Breakdown Voltage

50

V

IC=100μA, IE=0

BVCEO

Collector-Emitter Breakdown Voltage

45

V

IC=10mA, IB=0

BVEBO

Emitter-Base Breakdown Voltage

5

V

IE=100μA，IC=0

ICES

Collector Cut-off Current

2

100

nA

VCE=45V, VBE=0

HFE

DC Current Gain

100

630

VCE=1V, IC=100mA

VCE(sat)

Collector- Emitter Saturation Voltage

0.7

V

IC=500mA, IB=50mA

VBE(ON)

Base-Emitter On Voltage

1.2

V

VCE=1V, IC=300mA

fT

Current Gain-Bandwidth Product

100

MHz

VCE=5V, IC=10mA

Ccbo

Collector-Base Capacitance

12

pF

VCB=10V, IE=0

F=1MHz

█ hFE Classification

16

25

40

100—250

160—400

250—630

Tstg——Storage Temperature………………………… -55~150℃

Tj——Junction Temperature…………………………………150℃

PC——Collector Dissipation…………………………………625mW

VCBO——Collector-Base Voltage………………………………50V

VCEO——Collector-Emitter Voltage……………………………45V

VEBO——Emitter-Base Voltage………………………………5V

IC——Collector Current……………………………………800mA

1―Collector，C

2―Base，B

3―Emitter，E

TO-92

H337

NPN SILICON TRANSISTOR

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H337 Datasheet(PDF) 1 Page - SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD

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